The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Thin Film Transistor with Transparent ZnO as active channel layer

투명 ZnO를 활성 채널층으로 하는 박막 트랜지스터

  • 신백균 (인하대학교 전자전기공학과)
  • Published : 2006.01.01
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Abstract

Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

Keywords

References

  1. S. Zafar, C.S. Ferekides, D.L. Morel, 'Characterization and Analysis of ZnO:Al deposited by Reactive Magnetron Sputtering', J. Vac. Sci. Technol' Vol.A13, No.4, (1995) 2177-2182 https://doi.org/10.1116/1.579539
  2. Dengyuan Song, Dirk-Holger Neuhaus, James Xia, Arimin G. Aberle, 'Structure and Characteristics of ZnO:Al-nSi Heterojunctions prepared by Magnetron Sputtering', Thin Solid Films, Vol.422, (2002) 180-185 https://doi.org/10.1016/S0040-6090(02)00971-9
  3. Tamiko Ohshima, Tomoaki Ikegami, Kenji Ebihara, Ies Assmusen, Raj K. Thareja, 'Synthesis of p-Type ZnO Thin Films using Co-doping Techniques based on KrF Excimer Laser Deposition', Thin Solid Films, Vol.435 (2003) 49-55 https://doi.org/10.1016/S0040-6090(03)00383-3
  4. D.M. Bagnall, Y.F. Chan, Z. Zhu, T. Yao, S. Koyama, M.Y. Shen, T. Goto, 'Optically-pumped Lasing using ZnO at Room Temperature', Appl. Phys. Lett. Vol.70, No.17, (1997) 2230-2232 https://doi.org/10.1063/1.118824
  5. L. Znaidi, G.J.A.A.Soler Illia, S. Benyahia, C. Sanchez, A.V. Kanaev, 'Tailoring of Room Temperature Excitonic Luminescence in Sol-Gel Zinc-Oxide Silica Nanocomposite Films', Thin Solid Films, Vol. 441 (2003), 228-237 https://doi.org/10.1016/S0040-6090(03)00862-9
  6. S.J. Henley, M.N.R. Ashfold, D. Chems, 'The oriented Growth of ZnO Films on NaCl Substrate by Pulsed Laser Ablation', Thin Solid Films, Vol.422 (2002), 69-72 https://doi.org/10.1016/S0040-6090(02)00986-0
  7. K. Haga, T. Suzuki, Y. Kashiwaba, H. Watanabe, B. P. Zhang and Y. Segawa, 'High-Quality ZnO Films prepared on Si Wafers by Low-Pressure MO-CVD', Thin Solid Films, Vol.433 (2003) 131-134 https://doi.org/10.1016/S0040-6090(03)00327-4
  8. Satoshi Masuda, Ken Kitamura, Yoshihiro Okumura, Shigehiro Miyatake, Hitoshi Tabata, Tomoji Kawai, 'Transparent Thin Film Transistors using ZnO as an active Channel Layer and their electrical Properties', J. Appl, Phys., Vol.93, No.3, (2003) 1624-1630 https://doi.org/10.1063/1.1534627
  9. Yutaka Ohya, Tsukasa Niwa, Takauki Ban, Yasutaka Takahashi, 'Thin Film Transistor of ZnO fabricated by Chemical Solution Deposition', Jpn. J. Appl. Phys., Vol.40, (2001) 297-298 https://doi.org/10.1143/JJAP.40.297
  10. S. Kobayashi, S. Nonomura, K. Abe, K. Ushikoshi, S. Nitta, 'Preparation of Field Effect Transistor using Nano-Crystalline GaN', J. Non-Cryst, Solids, Vol 227-230, (1998) 1245-1249 https://doi.org/10.1016/S0022-3093(98)00305-6