한국전자파학회논문지 (The Journal of Korean Institute of Electromagnetic Engineering and Science)

  • 제16권3호
  • /
  • Pages.253-259
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  • 2005
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  • 1226-3133(pISSN)
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  • 2288-226X(eISSN)
한국전자파학회 (The Korean Institute of Electromagnetic Engineering and Science)
권호 표지

가변 특성이 우수한 실리콘 기판을 사용한 BST 박막형 가변 커패시터

BST Thin Film Variable Capacitor with High Tunability on Silicon Wafer

  • 김기병 (광운대학교 ITRC RFIC 연구센터) ;
  • 윤태순 (광운대학교 ITRC RFIC 연구센터) ;
  • 이종철 (광운대학교 ITRC RFIC 연구센터) ;
  • 김란영 (한국과학기술원 재료공학과) ;
  • 김현석 (한국과학기술원 재료공학과) ;
  • 김호기 (한국과학기술원 재료공학과)
  • Kim Ki-Byoung (RFIC Research and Education Center, Kwangwoon University) ;
  • Yun Tae-Soon (RFIC Research and Education Center, Kwangwoon University) ;
  • Lee Jong-Chul (RFIC Research and Education Center, Kwangwoon University) ;
  • Kim Ran-Young (Dept. of Material Sci. and Eng, KAIST) ;
  • Kim Hyun-Suk (Dept. of Material Sci. and Eng, KAIST) ;
  • Kim Ho-Gi (Dept. of Material Sci. and Eng, KAIST)
  • 발행 : 2005.03.01
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⟨ 이전 논문 다음 논문 ⟩

초록

본 논문에서는 고가의 단결정 기판 대신에 저가의 실리콘 기판을 이용한 인터디지탈 구조의BaSrTiO$_{3}$(BST) 박막 가변 커패시터를 제안하였다. 저가의 실리콘 기판 위의 BST 박막은 PLD 장비를 이용하여 증착하였으며, 제작된 가변 커패시터는 4 GHz까지 측정되었다. 또한 최대 인가 전압은 50 V이며, 5 kV/cm 조건에서 약 30$\%$ 정도의 가변율을 얻는다. 저가의 실리콘 기판 위에 BST 박막을 증착, 커패시터를 구현함으로써 BST 박막을 이용한 가변 소자들을 집적화할 수 있는 가능성을 보였다.

In this paper, BaSrTiO$_{3}$(BST) thin film tunable interdigital capacitor using low cost silicon substrate instead of expensive single-crystalline substrate is presented. The tunable capacitor in which BST thin film is deposited by PLD has operation frequency and applied bias up to 4 GHz and 50 V, respectively. The maximum tunability in capacitance is found to be 30$\%$, for an applied field of 5 kV/cm at a bias of 50 V. Therefore, it has been shown that the BST microwave tunable capacitor can be integrated onto Si substrate.

키워드

참고문헌

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