DOI QR코드

DOI QR Code

열형센서용 니켈 산화막의 형성 및 특성분석

Formation of Ni Oxide Thin Film and Analysis of Its Characteristics for Thermal Sensors

  • 이응안 (대양전기공업(주) 연구소 센서시스템팀) ;
  • 서정환 (대양전기공업(주) 연구소 센서시스템팀) ;
  • 노상수 (대양전기공업(주) 연구소 센서시스템팀)
  • 발행 : 2005.02.01

초록

Ni oxide thin films were formed through annealing treatment in the atmosphere after Ni thin films deposited by a r.f. magnetron sputtering method and then electric and material properties were analyzed for application to thermal sensors. Resistivity of Ni thin films decreased after annealing treatment at 30$0^{\circ}C$ and 40$0^{\circ}C$ for five hours due to crystallization of Ni thin films but the value increased over 45$0^{\circ}C$ because of Ni thin film's oxidation. Resistivity values of Ni thin films were in the range of 10.5 $\mu$Ωcm/$^{\circ}C$ to 2.84${\times}$10$^4$$\mu$Ωcm/$^{\circ}C$ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation such as 2,188 ppm/$^{\circ}C$ to 5,630 ppm/$^{\circ}C$ in the temperature range of 0 $^{\circ}C$∼150 $^{\circ}C$. The results demonstrate that Ni oxide thin films of annealing treatment at 40$0^{\circ}C$ for 5hours could be more advantageous than pure Ni thin films and Pt thin films from a point of output properties and TCR, applied to thermal sensors.

키워드

참고문헌

  1. J. E. Sundeen and R. C. Buchanan, 'Electrical properties of nickel-zirconia cermet films for temperature and flow-sensor application', Sens. and Actuators, A, (63), p. 33, 1997
  2. A. F. P. Van Putten and S. Middlehoek, 'Integrated silicon anemometer', Electronic Letters, 10, p. 425, 1974
  3. K. Petersen and J. Brown, 'High-precision, high-performance mass-flow sensor with integrated laminar flow micro-channels', Proc. Trans., 85, p. 361, 1985
  4. P. Rudent and P. Navratil, 'Design of a new sensor for mass flow controller using thin-film technology based on an analytical thermal model', J. Vac. Sci. Technol., A. (16), p. 3559, 1998
  5. S. K. Park, S. H. Kim, S. H. Kim, and Y. D. Kim, 'A flow direction sensor fabricated using MEMS technology and its simple interface circuit', Sens. And Actuators, B, (91), p. 347, 2003
  6. Sundden, J. E. and Buchanan, R. C. 'Thermal sensor properties of cermet resistor films on silicon substrates', Sens. and Actuators, A. (90), p. 118, 2001
  7. J. M. Nel, F. D. Auret, L. Wu, M. J. Legodi, W. E. Meyer, and M. Hayes, 'Fabrication and characterisation of NiO/ZnO structures', Sens. And actuators, B, (100), p. 270, 2004
  8. S. S. Noh, C. S. Lim, G. S. Chung, and K. H. Kim, 'Fabrication of PRTs and analysis of characteristics', IEE Elect. Letters, 39, p. 1179, 2003
  9. J. Zhang, Y. Nagao, S. Kuwano, and Y. Ito, 'Microstructure and temperature coefficient of resistance of platinum films', Jpn, J. Appl. Phys., 36, p. 834, 1997