DOI QR코드

DOI QR Code

Characteristics of Polycrystalline β-SiC Films Deposited by LPCVD with Different Doping Concentration

  • Noh, Sang-Soo (Research Institute, Daeyang Electric Co., LTD.) ;
  • Lee, Eung-Ahn (Research Institute, Daeyang Electric Co., LTD.) ;
  • Fu, Xiaoan (Department of Electrical Engineering and Computer Science, Case Western Reserve University) ;
  • Li, Chen (Department of Electrical Engineering and Computer Science, Case Western Reserve University) ;
  • Mehregany, Mehran (Department of Electrical Engineering and Computer Science, Case Western Reserve University)
  • Published : 2005.12.01

Abstract

The physical and electrical properties of polycrystalline $\beta$-SiC were studied according to different nitrogen doping concentration. Nitrogen-doped SiC films were deposited by LPCVD(1ow pressure chemical vapor deposition) at $900^{\circ}C$ and 2 torr using $100\%\;H_2SiCl_2$ (35 sccm) and $5 \%\;C_2H_2$ in $H_2$(180 sccm) as the Si and C precursors, and $1\%\;NH_3$ in $H_2$(20-100 sccm) as the dopant source gas. The resistivity of SiC films decreased from $1.466{\Omega}{\cdot}cm$ with $NH_3$ of 20 sccm to $0.0358{\Omega}{\cdot}cm$ with 100 sccm. The surface roughness and crystalline structure of $\beta$-SiC did not depend upon the dopant concentration. The average surface roughness for each sample 19-21 nm and the average surface grain size is 165 nm. The peaks of SiC(111), SiC(220), SiC(311) and SiC(222) appeared in polycrystalline $\beta$-SiC films deposited on $Si/SiO_2$ substrate in XRD(X-ray diffraction) analysis. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The variation of resistance ratio is much bigger in low doping, but the linearity of temperature dependent resistance variation is better in high doping. In case of SiC films deposited with 20 sccm and 100 sccm of $1\%\;NH_3$, the average of TCR(temperature coefficient of resistance) is -3456.1 ppm/$^{\circ}C$ and -1171.5 ppm/$^{\circ}C$, respectively.

Keywords

References

  1. B. J. Baliga, 'Power semiconductor devices for variable-frequency drives', Proceeding of the IEEE, Vol. 82, p. 1112,1994
  2. B. J. Baliga, 'Trends in power semiconductor devices', IEEE Transactions on Electron Devices, Vol. 43, p. 1717, 1996
  3. M. Meheregany, C. A. Zorman, N. Raj an, and C. H. Wu, 'Silicon carbide MEMS for harsh environments', Proceeding of the IEEE, Vol. 86, p. 1594, 1998
  4. X. Song, S. Rajgopal,J. M. Melzak, C. A. Zorman, and M. Mehregany, 'Development of multilayer SiC surface micromachining process with capabilities and design rules comparable to conventional polysilicon surface micromachining', Mater. Sci. Forum, Vol. 755, p. 389, 2002
  5. R. S. Okojie, A. A. Ned, A. D. Kurtz, and W. N. Carr, 'Characterization of highly doped n- and ptype 6H-SiC piezoresistors', IEEE Transactions on Electron Devices, Vol. 45, p. 785, 1998 https://doi.org/10.1109/16.662776
  6. H. M. Chuang, K. B. Thei, S. F. Tsai, and W. C. Liu 'Temperature-dependent characteristics of poly silicon and diffused resistors', IEEE Transactions on Electron Devices, Vol. 50, p. 1413,2003
  7. J. E. Sudden and R. C. Buchanan, 'Thermal sensor properties of cermet resistor films on silicon substrates', Sens. Actuat., A. 90, p. 118,2001
  8. R. Ziermann, J. V. Berg, E. Obermeier, F. Niemann, H. Moller, M. Eickhoff, and G. Krotz, 'High temperature piezoresistive $\beta$-SiC-On-SOI pressure sensor with on-chip SiC thermistor', Conf. Pro. ECSCRM'98, Montpellier, France, p. 229, 1998
  9. X. A. Fu, J. L. Dunning, C. A. Zorman, and M. Mehregany, 'Measurement of residual stress and elastic modulus of polycrystalline 3C-SiC films deposited by low-pressure chemical vapor deposition', Thin Solid Films, Vol. 492, p. 195, 2005
  10. X. A. Fu, J. L. Dunning, C. A. Zorman, and M. Mehregany, 'Polycrystalline 3C-SiC thin films deposited by dual precursor LPCVD for MEMS application', Sens. Actuat., A. 199, p. 169, 2005
  11. J. Y. Seo, S. Y. Yoon, K. Niihara, and K. H. Kim, 'Growth and microhardness of SiC films by plasma-enhanced chemical vapor deposition', Thin Solid Films, Vol. 406, p. 138, 2002

Cited by

  1. Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane vol.29, 2015, https://doi.org/10.1016/j.mssp.2013.12.017
  2. Effect of Nitrogen Doping on the Electrical Properties of 3C-SiC Thin Films for High-Temperature Sensors Applications vol.27, pp.1, 2014, https://doi.org/10.1007/s40195-013-0022-2