Abstract
The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency (RF) magnetron sputtering technique. It was found that the growth characteristics of the ZnO films have a strong dependence on the deposition temperature from 25 to $350^{\circ}C$. The ZnO films deposited below $200^{\circ}C$ exhibited reasonably good columnar grain structures with a highly preferred c-axis orientation while those above 200°C showed very poor columnar grain structures with a mixed-axis orientation. This study seems very useful for the future FBAR device applications.