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LSGM계 고체산화물 연료전지의 계면안정성을 위한 완층층의 도입

Introduction of a Buffering Layer for the Interfacial Stability of LSGM-Based SOFCs

  • 김광년 (한국과학기술연구원 재료연구부, 연세대학교 세라믹공학과) ;
  • 문주호 (연세대학교 세라믹공학과) ;
  • 손지원 (한국과학기술연구원 재료연구부) ;
  • 김주선 (한국과학기술연구원 재료연구부) ;
  • 이해원 (한국과학기술연구원 재료연구부) ;
  • 이종호 (한국과학기술연구원 재료연구부) ;
  • 김병국 (한국과학기술연구원 재료연구부)
  • Kim, Kwang-Nyeon (Materials Division, Korea Institute of Science and Technology, School of Advanced Materials Engineering, Yonsei University) ;
  • Moon, Jooho (School of Advanced Materials Engineering, Yonsei University) ;
  • Son, Ji-Won (Materials Division, Korea Institute of Science and Technology) ;
  • Kim, Joosun (Materials Division, Korea Institute of Science and Technology) ;
  • Lee, Hae-Weon (Materials Division, Korea Institute of Science and Technology) ;
  • Lee, Jong-Ho (Materials Division, Korea Institute of Science and Technology) ;
  • Kim, Byung-Kook (Materials Division, Korea Institute of Science and Technology)
  • 발행 : 2005.09.01

초록

In order to find a proper buffering material which can prohibit an unwanted interfacial reaction between anode and electrolyte of LSGM-based SOFC, we examined a gadolinium doped ceria and scandium doped zirconia as a candidate. For this examination, we investigated the microstructural and phase stability of the interface under different buffering layer conditions. According to the investigation, ceria based material induced a serious La diffusion out of the LSGM electrolyte resulted in the formation of very resistive $LaSrGa_3O_7$ phase at the interface. On the other hand zirconia based material was directly reacted with LSGM electrolyte and thus produced very resistive reaction products such as $La_2Zr_2O_7,\;Sr_2ZrO_4,\;LaSrGaO_4\;and\;LaSrGa_3O_7$. From this study we found that an improper buffering material induced the higher internal cell resistance rather than an interfacial stability.

키워드

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