한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)

  • 제15권6호
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  • Pages.234-238
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  • 2005
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  • 1225-1429(pISSN)
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  • 2234-5078(eISSN)
한국결정성장학회 (The Korea Association of Crystal Growth)
권호 표지

광대역 고온용 SAW filter 소자용 $La_3Ga_5SiO_{14}$ 단결정의 고밀도 플라즈마 식각

High density plasma etching of single crystalline $La_3Ga_5SiO_{14}$ for wide band high temperature SAW filter devices

  • 조현 (밀양대학교 신소재공학부)
  • Cho, Hyun (Department of Materials Engineering, Miryang National University)
  • 발행 : 2005.12.31
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초록

[ $Cl_2/Ar$ ] 유도결합 플라즈마(ICP)내의 플라즈마 조성, 이온 flux 및 이온 에너지가 $La_3Ga_5SiO_{14}$ 단결정 wafer의 식각속도, 표면 양상 및 화학량론적 조성에 미치는 영향을 조사하였다. 비교적 높은 ICP source power$({\sim}1000W)$ 또는 높은 $Cl_2$ gas 유량 비율 조건으로부터 최고 약 $1600{\AA}/min$의 실용적이고 조절이 용이한 식각속도를 확보하였다. 식각된 $La_3Ga_5SiO_{14}$ 표면은 식각 이전과 비슷하거나 더 낮은 표면 조도 특성을 나타내었으며 식각 공정 전, 후 표면의 화학량론적 조성에 있어서의 변화는 없는 것으로 조사되었다.

Effects of plasma composition, ion flux and ion energy on the etch rate, surface morphology and near surface stoichiometry of a single crystalline $La_3Ga_5SiO_{14}$ wafer have been examined in $Cl_2/Ar$ inductively coupled plasma (ICP) discharges. Maximum etch rate ${\sim}1600{\AA}/min$ was achieved either at relatively high source power $({\sim}1000W)$ or high $Cl_2$ content conditions in $Cl_2/Ar$ discharges. The etched surfaces showed similar or better RMS roughness values than those of the unetched control sample and the near surface stoichiometry was found not to be affected by ICP etching.

키워드

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