대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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고속 반도체 소자에서 배선 간의 Crosstalk에 의한 Coupling Capacitance 변화 분석

Analysis of Crosstalk-Induced Variation of Coupling Capacitance between Interconnect lines in High Speed Semiconductor Devices

  • Ji Hee-Hwan (Dept. of Electronics Engineering, Chungnam National Univ.) ;
  • Han In-Sik (Dept. of Electronics Engineering, Chungnam National Univ.) ;
  • Park Sung-Hyung (MagnaChip Semiconductor, Inc.) ;
  • Kim Yong-Goo (MagnaChip Semiconductor, Inc.) ;
  • Lee Hi-Deok (Dept. of Electronics Engineering, Chungnam National Univ.)
  • 발행 : 2005.05.01
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⟨ 이전 논문 다음 논문 ⟩

초록

본 논문에서는 Crosstalk에 의한 coupling capacitance의 변화량, ${\Delta}Cc$이 기본값인 Cc보다 더 커질 수 있음을 제안한 테스트 회로를 이용하여 실험적으로 증명하였다. 또한 ${\Delta}Cc$가 Aggressive line의 위상에 매우 의존함을 보였으며 위상이 같은 경우보다 반대인 경우에 ${\Delta}Cc$가 크게 됨을 보였다. 실험 결과의 타당성을 검증을 위해 HSPICE 시뮬레이션을 수행하여 실험치와 잘 맞음을 나타내었다.

In this paper, novel test patterns and on-chip data are presented to indicate that the variation of coupling capacitance, ${\Delta}Cc$ by crosstalk can be larger than static coupling capacitance, Cc. It is also shown that ${\Delta}Cc$ is strongly dependent on the phase of aggressive lines. for anti-phase crosstalk ${\Delta}Cc$ is always larger than Cc while for in-phase crosstalk ${\Delta}Cc$ is smaller than Cc. HSPICE simulation shows good agreement with the measurement data.

키워드

참고문헌

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