JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design

  • Published : 2004.09.30
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Abstract

The origin of the phenomena, obstructing circuit performance in the RF operating regime, as well as their modeling will be discussed. The applied surface-potential-based modeling allows self-consistent description of all phenomena important for accurate circuit simulation, as demonstrated with the MOSFET model HiSIM.

Keywords

References

  1. T A M Kevenaar, E J W ter Maten, 'RF IC simulation state-of-the-art and future trends', proc SISPAD, pp 7-10. Sept 1999 https://doi.org/10.1109/SISPAD.1999.799246
  2. B Razavi,' CMOS technology characterization for analog and RF design,' IEEE J Solid-State Circuit, Vol 34 pp 268-276. 1996 https://doi.org/10.1109/4.748177
  3. M Miura-Mattausch H Ueno. M Tanaka, H J Mattausch. S Kumashiro, T Yamaguchi K Yamashita. and N Nakayama, 'HiSIM: A MOSFET model for circuit simulation connecting circuit performance with technology,' Tech Dig IEDM pp 109-112. Dec 2002 https://doi.org/10.1109/IEDM.2002.1175790
  4. G Gildenblat and T -L Chen. ' Overview of an advanced surface-potential-based MOSFET model (SP),' Proc MSM, pp 657-661. 2002
  5. R van Langevelde. A J Scholten, L F Tiemeijer R J Havens, and D B M Klaassen, 'RF applications of MOS Model 11,' Proc MSM. pp 674-677 2002
  6. M Miura-Mattausch, U Feldmann, A Rahm, M Bollu, and D Savignac, 'Unified complete MOSFET model for analysis of digital and analog circuits,' IEEE Trans CAD/ICAS, Vol 15, pp 1-7, 1996 https://doi.org/10.1109/43.486267
  7. M Miura-Mattasuch, H Ueno, H J Mattausch, K Morikawa, S Itoh A Kobayashi, and H Masuda, '100nm-MOSFET model for circuit smulation Challenges, and solutions,' IEICE Trans Electron. Vol E86, pp 1009-1021, 2003
  8. HiSIM User's Manual http://www/starc.or.jp/kaihatsu/pdgr/hisim/
  9. Y P Tsividis, Operation and modeling of the MOS transistor, McGraw-Hill. 1999
  10. H C Pao and C T Sah. 'Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors.' Solrd-State Electron, Vol 9, pp 927-937, 1966 https://doi.org/10.1016/0038-1101(66)90068-2
  11. J R Brews, 'A charge-sheet model of the MOSFET,' Solid-State Electron, Vol 21, pp 345-355, 1978 https://doi.org/10.1016/0038-1101(78)90264-2
  12. BSIM3. version 3 3 manual. Department of Electncal Engtneering and Computer Science, University of California, Berkeley CA 1996
  13. D Frohman-Bentchkowsky and A S Grove' Conductance of MOS transistors in saturation,' IEEE Trans Electron Devices, Vol ED-16. pp 108-113, 1969 https://doi.org/10.1109/T-ED.1969.16571
  14. M Miura-Mattausch and H Jacobs, 'Analytical model for circuit simulation with quarter micron metal oxide semiconductor field effect transistors Subthreshold characteristics' Jpn J Appl Phys . Vol 29, pp L2279-L2282, 1990 https://doi.org/10.1143/JJAP.29.L2279
  15. D Kitamaru, H Ueno, K Morikawa, M Tanaka, M Miura-Mattausch, H J Mattausch, S Kumashiro, T Yamaguchi. K Yamashita. and N nakayama, 'Vth Model of Pocket-Implant MOSFETs for Circuit Simulation,'Proc SISPAD, pp 392-395 2001
  16. H Ueno, D Kitamaru, K Morikawa, M Tanaka M Miura-Mattausch, H J Mattausch, S Kumashiro, T Yamaguchi, K Yamashita, and N Nakayama 'Impurity-profile-based threshold-voltage model of pocket-implanted MOSFETs for circuit simulation,' IEEE Trans Electron Devices, Vol 49, pp 1783-1789, 2002 https://doi.org/10.1109/TED.2002.803633
  17. S Matsumoto, K Hisamitsu, M Tanaka, H Ueno, M Miura-Mattausch H J Mattausch, S Kumashiro, T Yamaguchi, S Odanaka, and N Nakayama, 'Validity of mobility universality of scaled metal？oxide？semiconductor field-effect transistors down to 100nm gate length,' J Appl Phys , Vol 92, pp 5228-5232, 2002 https://doi.org/10.1063/1.1510957
  18. D M Caughey and R E Thomas,' Carrier mobilities in Silicon empirically related to doping and field,' Proc IEE vol 55, pp 2192-2193, 1967 https://doi.org/10.1109/PROC.1967.6123
  19. M Tanaka, H Ueno, O Matsushima, and M Miura-Mattausch, 'High-electric-field electron transport at silicon/silicon-dioxide Interface inversion layer.' J Appl Phys vol 42 pp L280-L282, 2003 https://doi.org/10.1143/JJAP.42.L280
  20. Z Yu R W Dutton, and R A Kieh,' Circuit device modeling at the quantum level' Proc lWCE-6, pp 222-229, 1998
  21. S Chiba, S Mitani, K Hisamitsu, H Ueno, M Miura-Mattausch, H J Mattausch, T Ohguro, S Kumashiro, M Taguchi, H Masuda, and S Miyamoto, 'Analysis of harmonic distortion of MOSFET using HiSIM' Oyobutsurigakkai, 28p-ZL-4, pp 66, 2003
  22. S Matsumoto, 'Measurement and modeling of the 1/t noise for advanced MOSFETs,' Master Thesis, Hiroshima University, 2002
  23. A J Scholten, L F Tiemeijer, P W H de Vreede, and D B M Klaassen, 'A large signal non-quasi-static MOS model for RF circuit simulation,' Tech Dig IEDM pp 163-166, Dec 1999 https://doi.org/10.1109/IEDM.1999.823870
  24. S Hosokawa, Y Shiraga, H Uneo, M Miura-Mattausch, H J Mattausch, T Ohguro, S Kumashiro, M Taguchi, H Masuda, and S Miyamoto, 'Orgin of enhanced thermal noise for 100nm-MOSFETs,' Ext Abs SSDM, pp 20-21, Sept 2003
  25. A van der Ziel, 'Noise in Solid Sate Devices and Circuit,' New York, John Wiley & Sons, Inc, 1986
  26. D Navarro M Tanaka H Kawano H Ueno, M Miura-Mattausch, 'Circuit-simulation mode of $C_{gd}$ changes in small-size MOSFETs due to high channel-field gradient,' IEICE, Trans Electron, Vol E86-C, pp 474-480 2003
  27. S Jinbou, H Ueno, H Kawano, K Morikawa, N Nakayama, M Miura-Mattausch and H J Mattausch. 'Analysis of non-quasi-static contribution to samll-signal response for deep $sub-{\upsilon}m$ MOSFET technologies,' Ext Abs SSDM, pp 26-27, Sept 2002
  28. H Ueno, S Jin-bou, H Kawano, K Morikawa, N Nakayama, M Miura-Mattausch,and H J Mattausch, 'Drift-diffusion-based modeling of the non-quasistatic small-signal response for RF-MOSFET applications 'Proc SISPAD, pp 71-74 2002 https://doi.org/10.1109/SISPAD.2002.1034519
  29. W C Elmore, 'The transient response of damped linear networks with particular regard to wideband amplifiers,' J Appl Phys. Vol 19, pp 55-63, 1948 https://doi.org/10.1063/1.1697872
  30. H Kawano, M Nishozawa, S Matsumoto, S Mitani, M Tanaka, N Nakauama, H Ueno, M Miura-Mattausch and H J Mattausch 'A practical small-signal equivalent circuit model for RF-MOSFETs valid up to the cut-off frequency' Tech Dig IEEE MTT-S, pp 2121-2124, 2002 https://doi.org/10.1109/MWSYM.2002.1012289
  31. D Navarro, N Nakayama, K Machida, Y Takeda, H Ueno, H J Mattausch, M Miura-Mattausch, T Ohguro, T Iizuka, M Taguchi, T Kage, and S Miyamoto, 'Modeling of carrier transport dynamics at GHz-frequencies for RF circuit-simulation 'Proc SISPAD, Sept 2004
  32. N Nakayama, H Ueno, T Inoue, T Isa, M Tanaka and M Miura-Mattausch 'A self-consistent non-quasi-static MOSFET model for circuit simulation based on trasient carrier response,' Jpn J Appl Phys Vol 42. pp 2132-2136 2003 https://doi.org/10.1143/JJAP.42.2132
  33. N Nakayama, D Navarro, M Tanaka, H Ueno, M Miura0-Mattausch, H J Mattausch, T Ohguro, S Kumashiro M Taguchi, T Kage, and S Miyamoto 'Non-quasi-static model for MOSFET based on carrier-transit delay,'Electronics Letters, Vol 40, pp 276-278, 2004 https://doi.org/10.1049/el:20040054