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MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design  

Miura-Mattausch, M. (Advanced Sciences of Matter Hiroshima University)
Mattausch, H.J. (Advanced Sciences of Matter Hiroshima University)
Ohguro, T. (Semiconductor Academic Research Center)
Iizuka, T. (Semiconductor Academic Research Center)
Taguchi, M. (Semiconductor Academic Research Center)
Kumashiro, S. (Semiconductor Academic Research Center)
Miyamoto, S. (Semiconductor Academic Research Center)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.4, no.3, 2004 , pp. 133-140 More about this Journal
Abstract
The origin of the phenomena, obstructing circuit performance in the RF operating regime, as well as their modeling will be discussed. The applied surface-potential-based modeling allows self-consistent description of all phenomena important for accurate circuit simulation, as demonstrated with the MOSFET model HiSIM.
Keywords
MOSFETs; High-Frequency Operation; Circuit Simulation Model; HiSIM; Surface Potential;
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