Journal of Information Display

The Korean Infomation Display Society (한국정보디스플레이학회)
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A High Voltage NMOSFET Fabricated by using a Standard CMOS Logic Process as a Pixel-driving Transistor for the OLED on the Silicon Substrate

  • Lee, Cheon-An (Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University) ;
  • Jin, Sung-Hun (Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University) ;
  • Kwon, Hyuck-In (Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University) ;
  • Cho, Il-Whan (Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University) ;
  • Kong, Ji-Hye (Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University) ;
  • Lee, Chang-Ju (Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University) ;
  • Lee, Myung-Won (Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University) ;
  • Kyung, Jae-Woo (Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University) ;
  • Lee, Jong-Duk (Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University)
  • Published : 2004.03.24
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Abstract

A high voltage NMOSFET is proposed to drive top emission organic light emitting device (OLED) used in the organic electroluminescent (EL) display on the single crystal silicon substrate. The high voltage NMOSFET can be fabricated by utilizing a simple layout technique with a standard CMOS logic process. It is clearly shown that the maximum supply voltage ($V_{DD}$) required for the pixel-driving transistor could reach 45 V through analytic and experimental methods. The high voltage NMOSFET was fabricated by using a standard 1.5 ${\mu}m$, 5 V CMOS logic process. From the measurements, we confirmed that the high voltage NMOSFET could sustain the excellent saturation characteristic up to 50 V without breakdown phenomena.

Keywords

References

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