Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optimization of Removal Rates with Guaranteed Dispersion Stability in Copper CMP Slurry

  • Kim Tae-Gun (School of Electrical and Electronics Engineering, Chung-ang University) ;
  • Kim Nam-Hoon (School of Electrical and Electronics Engineering, Chung-ang University) ;
  • Kim Sang-Yong (School of Electrical and Electronics Engineering, Chung-ang University) ;
  • Chang Eui-Goo (School of Electrical and Electronics Engineering, Chung-ang University)
  • Published : 2004.12.01
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Abstract

Copper metallization has been used in high-speed logic ULSI devices instead of the conventional aluminum alloy metallization. One of the key issues in copper CMP is the development of slurries that can provide high removal rates. In this study, the effects of slurry chemicals and pH for slurry dispersion stability on Cu CMP process characteristics have been performed. The experiments of copper slurries containing each different alumina and colloidal silica particles were evaluated for their selectivity of copper to TaN and $SiO_{2}$ films. Furthermore, the stability of copper slurries and pH are important parameters in many industries due to problems that can arise as a result of particle settling. So, it was also observed about several variables with various pH.

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References

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