대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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Buffered Oxide Etch 세정에 의한 다결정 실리콘 TFT의 전기적 특성 개선

Improvement of the Electrical Characteristics of a Polysilicon TFT Using Buffered Oxide Etch Cleaning

  • 발행 : 2004.08.01
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⟨ 이전 논문 다음 논문 ⟩

초록

본 논문에서는 UV 처리와 BOE 세정을 이용하여 레이저 어닐링 전의 실리콘 표면에 자연 산화막을 제거하여 다결정 실리콘 TFT의 신뢰성을 향상시키는 방법을 제안하였다. 전처리 공정이 다결정 실리콘의 표면 거칠기에 미치는 영향을 AFM으로 측정하였으며, 다결정 실리콘 TFT의 전기적 특성인 스위칭 특성과 항복특성을 대형 유리기판의 위치와 전처리의 유무에 대해서 조사하였다.

we developed a technique to manufacture more reliable polycrystalline silicon TFT-LCDs using UV cleaning and buffered oxide etch(BOE) cleaning which remove the native oxide of the silicon surface before laser annealing. To investigate the effects of pre-treatments on the surface roughness of polycrystalline silicon, we measured atomic force microscopy(AFM). Also the electrical characteristics of polysilicon TFTs, breakdown characteristic and switching Performance, were tested for various pre-treatment conditions and several locations in large glass substrate.

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참고문헌

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