KIEE International Transactions on Electrophysics and Applications

The Korean Institute of Electrical Engineers (대한전기학회)
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Relationship between Secondary Electron Emissions and Film Thickness of Hydrogenated Amorphous Silicon

  • Yang, Sung-Chae (Division of Electronics and Information, Chonbuk National University) ;
  • Chu, Byung-Yoon (Division of Electronics and Information, Chonbuk National University) ;
  • Ko, Seok-Cheol (Division of Electronics and Information, Chonbuk National University) ;
  • Han, Byoung-Sung (Division of Electronics and Information, Chonbuk National University)
  • Published : 2004.08.01
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Abstract

The temporal variation of a secondary electron emission coefficient (${\gamma}$ coefficient) of hydrogenated amorphous silicon (a-Si:H) was investigated in a dc silane plasma. Estimated ${\gamma}$ coefficients have a value of 2.73 ${\times}$ 10$^{-2}$ on the pure aluminum electrode and 1.5 ${\times}$ 10$^{-3}$ after 2 hours deposition of -Si:H thin films on a cathode. It showed an abrupt decrease for about 30 minutes before saturation. The variation of the ${\gamma}$ coefficient was estimated as a function of the thin film thickness, and the film thickness was about 80 nm after 30 minutes deposition time. These results are compared with the results of a computer simulation for ion penetration into a cathode.

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References

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