KIEE International Transactions on Electrophysics and Applications

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

Relationship between Secondary Electron Emissions and Film Thickness of Hydrogenated Amorphous Silicon

  • Yang, Sung-Chae (Division of Electronics and Information, Chonbuk National University) ;
  • Chu, Byung-Yoon (Division of Electronics and Information, Chonbuk National University) ;
  • Ko, Seok-Cheol (Division of Electronics and Information, Chonbuk National University) ;
  • Han, Byoung-Sung (Division of Electronics and Information, Chonbuk National University)
  • 발행 : 2004.08.01
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초록

The temporal variation of a secondary electron emission coefficient (${\gamma}$ coefficient) of hydrogenated amorphous silicon (a-Si:H) was investigated in a dc silane plasma. Estimated ${\gamma}$ coefficients have a value of 2.73 ${\times}$ 10$^{-2}$ on the pure aluminum electrode and 1.5 ${\times}$ 10$^{-3}$ after 2 hours deposition of -Si:H thin films on a cathode. It showed an abrupt decrease for about 30 minutes before saturation. The variation of the ${\gamma}$ coefficient was estimated as a function of the thin film thickness, and the film thickness was about 80 nm after 30 minutes deposition time. These results are compared with the results of a computer simulation for ion penetration into a cathode.

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참고문헌

  1. O. Sahni and C. Lanza, 'Influence of the secondary electron emission coefficient of argon on Paschen breakdown curves in ac plasma panels for neon +0.1 % argon mixture', J. Appl. Phys., vol. 47, pp. 5107-5108, 1976
  2. G. Auday, Ph. Guillot, J. Galy and H. Brunet, 'Experimental study of the effective secondary emission coefficient for rare gases and copper electrodes', J. Appl. Phys., vol. 83, pp. 5917-5921, 1998
  3. O. B. Postel and M. Cappelli, 'Vacuum emission and breakdown characteristics of a planar He-Xe microdischarge', Appl. Phys. Lett., vol. 76, pp. 544546, 2000
  4. M. Hirata et. al., 'A novel electrostatic ion-energy spectrometer by the use of a proposed 'self-collection' method for secondary-electron emission from a metal collector', Rev. Sci. Instrum., vol. 74, pp. 1913-1916, 2003
  5. J. Y. Lim et. al., 'Work function of Mg'O single crystals from ion-induced secondary electron errussion coefficient', J. AppI. Phys., vol. 94, pp. 764-769, 2003
  6. Y. H. Cheng, H. Kupfer and F. Richter, 'Influence of duty cycle on the structure and secondary electron emission properties of MgO films deposited by pulsed mid-frequency magnetron sputtering', J. Appl. Phys., vol. 94, pp. 3624-3628, 2003
  7. Y. Sosov and C. E. Theodosiou, 'Determination of electric field-dependent effective secondary emission coefficients for He/Xe ions on brass', J. AppI. Phys., vol. 95,pp.4385-4388, 2004
  8. M. Takai, T. Nishimoto, M. Kondo and A. Matsuda, 'Anomalous behavior of electron temperature in silane glow discharge plasmas', Thin Solid Films, vol. 390, pp. 83-87, 2001
  9. A.von Engel, 'IONIZED GASES', Oxford University Press, p.151, 1965