대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

바이폴라 트랜지스터 등가회로 모델의 베이스-컬렉터 캐패시턴스 분리를 위한 개선된 추출 방법

An Improved Extraction Method for Splitting Base-Collector Capacitance in Bipolar Transistor Equivalent Circuit Model

  • 이성현 (한국외국어대학교 전자정보공학부)
  • 발행 : 2004.07.01
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⟨ 이전 논문 다음 논문 ⟩

초록

본 논문에서는 교류전류 집중현상이 고려된 바이폴라 등가모델에서 내부 베이스-컬렉터 캐패시턴스(C/sub μ/)와 외부 베이스-컬렉터 캐패시턴스(C/sub μx/)를 분리해서 추출하는 개선된 방법을 연구하였다. 먼저, 기존 추출방법들의 문제점들을 파악하고, 교류전류 집중 캐패시턴스가 포함된 차단모드 등가회로로부터 개선된 추출방정식들을 유도하였다. 이렇게 추출된 C/sub μx/와 C/sub μx/를 사용하여 모델 된 전류 및 전력이득 주파수 응답곡선들은 기존 추출방법으로 얻어진 곡선보다 측정 데이터와 훨씬 잘 일치되었으며, 이는 개선된 추출방법의 정확도를 증명한다.

An improved extraction method considering ac current crowding effect is investigated to determine intrinsic ( $C_{\mu}$) and extrinsic ( $C_{\mu}$) base-collector capacitances of bipolar junction transistors separately. The drawbacks of conventional methods are pointed out, and the improved extraction equations are derived from a cutoff mode equivalent circuit with the ac crowding capacitance. The frequency response curves of modeled current and power gains using the extracted values of $C_{\mu}$ and $C_{\mu}$ have much better agreements with measured ones than those of the conventional methods, verifying the accuracy of the improved technique.

키워드

참고문헌

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