한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)

  • 제14권3호
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  • Pages.95-100
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  • 2004
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  • 1225-1429(pISSN)
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  • 2234-5078(eISSN)
한국결정성장학회 (The Korea Association of Crystal Growth)
권호 표지

Effects of elastic strain on the agglomeration of silicide films for electrical contacts in integrated circuit applications

  • Choy, J.H. (Department of Physics, Simon Fraser University)
  • 발행 : 2004.06.01
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초록

This paper reports a potential problem in the electrical performance of the silicide film to silicon contacts with respect to the scaling trend in integrated circuit (IC) devices. The effects of elastic strain on the agglomeration of the coherent silicide film embedded in an infinite matrix are studied employing continuum linear elasticity and finite-difference numerical method. The interface atomic diffusion is taken to be the dominant transport mechanism where both capillarity and elastic strain are considered for the driving forces. Under plane strain condition with elastically homogeneous and anisotropic system with cubic symmetry, the dilatational misfit and the tetragonal misfit in the direction parallel to the film thickness are considered. The numerical results on the shape evolution agree with the known trend that the equilibrium aspect ratio of the film increases with the elastic strain intensity. When the elastic strain intensity is taken to be only a function of the film size, the flat film morphology with a large aspect ratio becomes increasingly unstable since the equilibrium aspect ratio decreases, as the film scales. The shape evolution results in a large decrease in contact to silicon area, and may deteriorate the electrical performances.

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참고문헌

  1. International technology roadmap for semiconductros 2002 update Semiconductor Industry Association
  2. Appl. Phys. Lett. v.75 Effects of cobalt silicidation and post annealing on void defects at the sidewall spacer edge of metal-oxide-silicon field effect transistors Y.Kim;J.Kim;J.Park;H.Choi https://doi.org/10.1063/1.124664
  3. J. Korean Cer. Soc. v.38 Effects of Ti and TiN capping layers on cobalt-silicided MOS device characteristics in embedded DRAM and logic J.Kim;Y.Kim;J.Choy
  4. Silicides for VLSI applications S.P.Murarka
  5. J. Electron. Mater. v.30 Anomalous scaling effect of tungsten/titanium nitride/titanium to silicon electrical contact resistance for giga bit DRAM applications J.Choy;Y.Kim;T.Hwang;Y.C.Kim;D.Lee;J.Choi;K.Park;S.Han https://doi.org/10.1007/s11664-001-0180-2
  6. Japan. J. Appl. Phys. v.20 Theoretical considerations on ion channeling effect through silicide-silicon interface H.Ishiwara;S.Saitoh;K.Hikosaka https://doi.org/10.1143/JJAP.20.843
  7. J. Electrochem. Soc. v.148 Interlayer mediated epitaxy of cobalt silicide on silicon (100) from low temperture chemical vapor deposition of cobalt A.Londergan;G.Nuesca;C.Goldberg;G.Peterson;A.Kaloyeros;B.Arkles;J.Sullivan https://doi.org/10.1149/1.1344535
  8. Appl. Phys. Lett. v.82 Epitaxial growth of CoSi2 on hydrogen-terminated Si(001) K.Ishida;Y.Miura;K.Hirose;S.Harada;T.Narusawa https://doi.org/10.1063/1.1562335
  9. J. Appl. Phys. v.71 Growth of epitaxial C54 TiSi2 on Si(111) substrate by in situ annealing in ultrahigh vacuum K.Kim;J.Lee;D.Seo;C.Choi;S.Hong;J.Koh;S.Kim;J.Lee;M.Nicolet https://doi.org/10.1063/1.350895
  10. J. Appl. Phys. v.93 Structure and orientation of epitaxial titanium silicide naaowires determined by electron microdiffraction M.Stevens;Z.He;D.Smith;P.Bennett https://doi.org/10.1063/1.1565173
  11. Acta Metall. Mater. v.40 On the morphological development of second-phase particles in elastically-stressed solids P.Voorhees;G.Mcfadden;W.Johnson https://doi.org/10.1016/0956-7151(92)90462-N
  12. Mater. Sci. Eng. v.A285 On the shape evolution of a two dimensional coherent precipitate with a general misfit strain J.Choy;J.Lee
  13. Acta Mater. v.51 Modelling the evolution of phase boundaries in solids at the meso-and nano-scales K.Thornton;J.Agren;P.Voorhees https://doi.org/10.1016/j.actamat.2003.08.008
  14. Proc. Phys. Soc. London v.A65 The elastic behavior of a crystalline aggregate R.Hill
  15. Phys. Rev. v.B58 Elastic constants of silicon using monte carlo simulations M.Karimi;H.Yates;J.Ray;T.Kaplan;M.Mostoller
  16. J. Appl. Phys. v.68 Determination of the elastic constants of a cobalt disilicide intermetallic compound G.Guenin;M.Ignat;O.Thomas https://doi.org/10.1063/1.346854
  17. J. Appl. Phys. v.84 Density functional theory for calculation of elastic properties of orthorhombic crystals: application to TiSi2 P.Ravindran;L.Fast;P.Korzhavyi;B.Johansson https://doi.org/10.1063/1.368733
  18. J. Appl. Phys. v.36 Morphological changes of a surface of revolution due o capillarity-induced surface diffusion F.Nichols;W.Mullins https://doi.org/10.1063/1.1714360
  19. J. Appl. Phys. v.77 Nonlinear stability analysis of the diffusional spheroidization of rods J.Choy;S.Hackney;J.Lee https://doi.org/10.1063/1.359207