대한전기학회논문지:시스템및제어부문D (The Transactions of the Korean Institute of Electrical Engineers D)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

0.35$\mu{m}$ 싱글폴리 표준 CMOS 공정에서 제작된 아날로그 메모리 셀의 프로그래밍 특성

Characteristics of Programming on Analog Memory Cell Fabricated in a 0.35$\mu{m}$Single Poly Standard CMOS Process

  • 채용웅 (계명대학 공대 전자공학과) ;
  • 정동진 (계명대학 공대 전자공학과)
  • 발행 : 2004.06.01
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초록

In this paper, we introduce the analog memory fabricated in a 0.35${\mu}{\textrm}{m}$ single poly standard CMOS process. We measured the programming characteristics of the analog memory cell such as linearity, reliability etc. Finally, we found that the characteristics of the programming of the cell depend on the magnitude and the width of the programming pulse, and that the accuracy of the programming within 10mV is feasible under the optimal condition. In order to standardize the characteristics of the cell, we have investigated numbers of cells. Thus we have used a program named Labview and a data acquisition board to accumulate the data related to the programming characteristics automatically.

키워드

참고문헌

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