The Junction Termination Design Employing Shallow Trench and Field Limiting Ring for 1200 V-Class Devices

얕은 트렌치와 전계 제한 확산 링을 이용한 접합 마감 설계의 1200 V급 소자에 적용

  • Published : 2004.06.01

Abstract

We have proposed the junction termination design employing shallow trench filled with silicon dioxide and field limiting ring (FLR). We have designed trenches between P+ FLRs to decrease the junction termination radius without sacrificing the breakdown voltage characteristics. We have successfully fabricated and measured improved breakdown voltage characteristics of the Proposed device for 1200 V-class applications. The junction termination radius of the proposed device has decreased by 15%-21% compared with that of the conventional FLR at the identical breakdown voltage. The junction termination area of the proposed device has decreased by 37.5% compared with that of the conventional FLR. The breakdown voltage of the proposed device employing 7 trenches was 1156 V, which was 80% of the ideal parallel-plane .junction breakdown voltage.

Keywords

References

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