Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
권호 표지
DOI QR코드

DOI QR Code

Chemical Vapor Deposition of β-LiGaO2 Films on Si(100) Using a Novel Single Precursor

  • Sung, Myung M. (Department of Chemistry, Kookmin University) ;
  • Kim, Chang G. (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Kim, Yun-Soo (Advanced Materials Division, Korea Research Institute of Chemical Technology)
  • Published : 2004.04.20
Download PDF
⟨ Previous Next ⟩

Abstract

$LiGaO_2$ films have been grown on Si (100) substrates using a new single precursor $[Li(OCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ under high vacuum conditions $(5{\times}10^{-6}Torr)$. The $[Li(OCH_2CH_2OCH_3)_2Ga(CH_3)_2]_2$ was synthe-sized and characterized by using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline $LiGaO_2$ films preferentially oriented in the [010] direction can be deposited on Si (100) at 500-550$^{\circ}C$ by metal organic chemical vapor deposition (MOCVD). The single precursor $[LiOCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ has been found suitable for chemical vapor deposition of $LiGaO_2$ thin films on Si substrates.

Keywords

References

  1. Nicholls, J. F. H.; Gallagher, H.; Henderson, B.; Trager-Cowan, C.; Middleton, P. G.; O'Donnell, K. P.; Cheng, T. S.; Foxon, C. T.; Chai, B. H. T. Mater. Res. Soc. Symp. Proc. 1996, 395, 535.
  2. Okata, M.; Higaki, Y.; Yanagi, T.; Shimizu, Y.; Nanishi, Y.; Ishii,T.; Miyazawa, S. J. Crystal Growth 1998, 189/190, 213. https://doi.org/10.1016/S0022-0248(98)00231-0
  3. Marezio, M. Acta Crystallogr. 1965, 18, 481. https://doi.org/10.1107/S0365110X65001068
  4. Ishii, T.; Tazoh, Y.; Miyazawa, S. J. Crystal Growth 1998, 186,409. https://doi.org/10.1016/S0022-0248(97)00510-1
  5. Hellman, E. S. MRS Internet, J. Nitride Semicond. Res. 1998, 3,11.
  6. Oktyabrsky, S.; Dovidenko, K.; Sharma, A. K.; Joshkin, V.; Narayan, J. MRS Internet, J. Nitride Semicond. Res. 1998, 4S1, G6.46.
  7. Piquette, E. C.; Bridger, P. M.; Beach, R. A.; McGill, T. C. MRSInternet, J. Nitride Semicond. Res. 1999, 4S1, G3.77.
  8. Dovidenko, K.; Oktyabrsky, S.; Narayan, J.; Razeghi, M. MRSInternet, J. Nitride Semicond. Res. 1999, 4S1, G6.46.
  9. Sumiya, M.; Ohnishi, T.; Tanaka, M.; Ohtomo, A.; Kawasaki, M.;Yoshimoto, M.; Koinuma, K.; Ohtsuka, K.; Fuke, S. MRSInternet, J. Nitride Semicond. Res. 1999, 4S1, G6.23.
  10. Rouvi"ere, J. L.; Arlery, M.; Niebuhr, R.; Bachem, K. H.; Briot,O. MRS Internet, J. Nitride Semicond. Res. 1996, 1, 33.
  11. Kung, P.; Saxler, A.; Zhang, X.; Walker, D.; Lavado, R.; Razeghi,M. Appl. Phys. Lett. 1996, 69, 2116. https://doi.org/10.1063/1.116898
  12. Tazoh, Y.; Ishii, T.; Miyazawa, S. Jpn. J. Appl. Phys. 1997, 36,L746. https://doi.org/10.1143/JJAP.36.L746
  13. Doolittle, W. A.; Kang, S.; Kropewnicki, T. J.; Stock, S.; Kohl, P.A.; Brown, A. S. J. Electron Mater. 1998, 27, L58. https://doi.org/10.1007/s11664-998-0137-9
  14. MacKenzie, J. D.; Donovan, S. M.; Abernathy, C. R.; Pearton, S.J.; Holloway, P. H.; Linares, R.; Zavada, J.; Chai, B. J. Electrochem.Soc. 1998, 145, 2581. https://doi.org/10.1149/1.1838684
  15. Jung, E.; Yoo, S. H.; Chung, T.; Kim, C. G.; Kim, Y.; Jung, D. Y.Inorganic Chemistry Communications 2002, 5, 439. https://doi.org/10.1016/S1387-7003(02)00438-0
  16. Shriver, D. F.; Drezdon, M. A. The Manipulation of Air SensitiveCompounds, 2nd ed., Wiley: New York, 1986.
  17. Armarego, W. L. F.; Perrin, D. D. Purification of LaboratoryChemicals, 4th ed.; Butterworth-Heinemann: Oxford, 1996.
  18. Sheldrick, G. M. Acta Crystallogr. 1990, A46, 467.
  19. Sheldrick, G. M. SHELXL-93: Program for Crystal StructureRefinement; University of Göttingen: Göttingen, Germany, 1993.
  20. Ishizaka, A.; Shiraki, Y. J. Electrochem. Soc. 1986, 133, 666. https://doi.org/10.1149/1.2108651
  21. Sung, M. M.; Kim, Y. Bull. Korean Chem. Soc. 1990, 11, 118.
  22. Song, S.; Lee, S. S.; Yoo, S. H.; Chung, T.; Kim, C. G.; Lee, S.;Kim, Y. Bull. Korean Chem. Soc. 2003, 24, 953. https://doi.org/10.1007/s11814-007-0104-9

Cited by

  1. Chemical Vapor Deposition of β-LiGaO2 Films on Si(100) Using a Novel Single Precursor. vol.35, pp.30, 2004, https://doi.org/10.1002/chin.200430023
  2. Synthesis of New Donor-functionalized Alcohols as Organic Ligands for Metal Precursors of Metal Organic Chemical Vapor Deposition vol.26, pp.5, 2005, https://doi.org/10.5012/bkcs.2005.26.5.829