한국수소및신에너지학회논문집 (Transactions of the Korean hydrogen and new energy society)

  • 제14권1호
  • /
  • Pages.8-16
  • /
  • 2003
  • /
  • 1738-7264(pISSN)
  • /
  • 2288-7407(eISSN)
한국수소및신에너지학회 (The Korean Hydrogen and New Energy Society)
권호 표지

TiO2 박막의 증착거동에 미치는 스퍼터링 공정변수의 영향

Effect of Sputtering Parameter on the Deposition Behavior of TiO2 Thin Film

  • Kim, Eul-Soo (Dept. of Metallurgical & Materials Engineering, Gyeongsang National University) ;
  • Lee, Gun-Hwan (Dept. of Metallurgical & Materials Engineering, Gyeongsang National University) ;
  • Kwon, Sik-Chol (Dept. of Metallurgical & Materials Engineering, Gyeongsang National University) ;
  • Ahn, Hyo-Jun (Korea Institute of Machinery & Materials)
  • 발행 : 2003.03.15
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

$TiO_2$ thin films were deposited by DC reactive magnetron sputtering with variations in sputtering parameter such as Ar and $O_2$ flow rate, DC power, substrate temperature and magnetic field. Deposition rate, crystal structure, chemical bond of $TiO_2$ films on the deposition conditions were investigated by Alpha-step, X-ray Diffractometer(XRD), X-ray Photoelectron Spectroscopy(XPS). When the DC power was applied at 500watt, deposition rate of $TiO_2$ film was about 480A/min. $TiO_2$ films coated under the deposition condition of 15sccm Ar and 7~10sccm $O_2$ flow rate was only observed anatase phase. With increasing substrate temperature from RT to $300^{\circ}C$, crystal orientation of $TiO_2$ films variously became.

키워드

참고문헌

  1. Gerischer. H., Topics in Applied Physics, Vol. 31, 1979, pp. 115
  2. D. Anslax, Taschenbuch fur Chemiker und Physiker, Springer, Berlin, 1967
  3. I. Sopyan, S. Murasawa, K. Hashimoto and A. Fujishima, Chem. Lett., Vol. 8, 1994, 723 https://doi.org/10.1246/cl.1994.723
  4. H. Matsubara, M. Takada, S. K.oyama, K. Hashimoto and A. Fujishima, Chem. Lett., Vol. 9, 1995, pp. 767
  5. P. J. Martin, J. Mater, Science, Vol. 21, 1986, pp. 1 https://doi.org/10.1007/BF01144693
  6. A. Sclafani, L. Palmisano, and E. Davi, New J. Chem. Vol. 14, 1990, pp. 265
  7. V. Augugliaro, L. Palmisano, M. Schiavello, A. Sclafani, L. Marchese, G. Martra, and F. Miano, Vol. 69, 1991, pp. 323
  8. K. A. Vorotiov, E. V. Orlova and V. I. Petrovsky, Thin Solid Films, Vol. 219, 1992, pp. 180
  9. L. Hu, T. Yoko, H. Kozuka and S. Sakka, Thin Solid Films, Vol. 219, 1992, pp. 18 https://doi.org/10.1016/0040-6090(92)90718-Q
  10. Y. Paz and A. Heller, J. Mater. Res., Vol. 12, 1997, pp. 2759 https://doi.org/10.1557/JMR.1997.0367
  11. G. Atanassov, R. Thielch and D. Popov, Thin Solid Films, Vol. 223, 1993, pp. 288-292 https://doi.org/10.1016/0040-6090(93)90534-V
  12. G. K. Boschloo, A. Goossens, and J. Schoonman, J. Electrochem. Soc., Vol. 144, 1997, pp. 1311-1317 https://doi.org/10.1149/1.1837590
  13. J. Szczyrbowski, G. Brauer, M. Ruske, G. Teschner, A. Zmelty, J. Non-CrystallineSolids Vol. 218, 1997, pp. 262-266 https://doi.org/10.1016/S0022-3093(97)00239-1
  14. P. Alexandrov, J. Koprinarova, and D Todorov, Vacuum. Vol. 47, 1996, pp. 1333 https://doi.org/10.1016/S0042-207X(96)00196-0
  15. M. Kitao, Y. Oshima, and K. Urabe, Jpn. J. Appl. Phys., Vol. 36, 1997, pp. 4423-4426 https://doi.org/10.1143/JJAP.36.4423
  16. K. Okimura, N. Maeda, A. Shibata, Thin Solid Films, Vol. 281, 1996, pp. 427-430 https://doi.org/10.1016/0040-6090(96)08659-2
  17. K. H. Ro, W. Park, G. Choe and J. C. Ahn, Korea J. Mater. Res., Vol. 7, 1997, pp. 21-26
  18. K. Okimura, A. Shibata, N. Maeda, K. Tachibana, Y. Noguchi and K. Tsnchida, Jpn. J. Appl. Phys., Vol. 34, 1995, pp. 4950-4955 https://doi.org/10.1143/JJAP.34.4950
  19. K. Okimura, N. Maeda and A. Shibata, Thin Solid Films, Vol. 281, 1996, pp. 427-430 https://doi.org/10.1016/0040-6090(96)08659-2
  20. G. Brauer, W. Dicken, J. Szczyrbowski, G. Teschner and A. Zmelty, Proc. of the 3rd ISSP, Tokyo, Vol. 63, 1995
  21. D. Wicaksana, A. KObayashi and A. Kinbara, J. Vac. Sci. Technol., Vol 10A, 1992, pp. 1479
  22. P. Loble, M. Huppertz and D. Mergel, Thin Solid Films, Vol. 251, 1994, pp. 72-79 https://doi.org/10.1016/0040-6090(94)90843-5
  23. F. Perry, A. Billard, C. Frantz, Surface and Coatings Technology, Vol. 94, 1997, pp. 339-344 https://doi.org/10.1016/S0257-8972(97)00457-X
  24. A. Kh. Abduev, A. M. Magomedov and Sh. O. Shakhshaev, Inorganic Materials, Vol. 33, 1997, pp. 282-284
  25. K. H. Ro, W. Park, G. Choe and J. C. Ahn, Korean Journal of Materials Research, Vol. 7, 1997, pp. 21-26
  26. K. Okimura and A. Shibata, Jpn. J. Appl. Phys., Vol. 36, 1997, pp. 4917-4921 https://doi.org/10.1143/JJAP.36.4917