한국진공학회지 (Journal of the Korean Vacuum Society)

한국진공학회 (The Korean Vacuum Society)
권호 표지

Synthesis of Zirconium Oxides on silicon by Radio-Frequency Magnetron Sputtering Deposition

  • Ma, Chunyu (State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology) ;
  • Zhang, Qingyu (State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology)
  • 발행 : 2003.10.01
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초록

Zirconium oxide films have been synthesized by radio-frequency magnetron sputtering deposition on n-Si(001) substrate with metal zirconium target at variant $O_2$ partial pressures. The influences of $O_2$ partial pressures of the morphology, deposition rate, microstructure, and the dielectric constant of $ZrO_2$ have been discussed. The results show that deposition rate of $ZrO_2$ films decreases, the roughness, and the thickness of the native $SiO_2$ interlayer increases with the increase of $O_2$ partial pressure. $ZrO_2$ films synthesized at low $O_2$ partial pressure are amorphous and monoclinic polycrystalline in nanometer scale at low $O_2$ partial pressure. The relative dielectrics of $ZrO_2$ films are in the range of 12 to 25.

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