Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Evidence of Material-dependent and Temperature- dependent Quenching Rates by Infrared Imaging in S.I. GaAs

반절연 갈륨비소의 적외선 영상에 의한 웨이퍼성장조건 및 온도종속 퀀칭율 증명

  • Published : 2003.07.01
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Abstract

The effect of photoquenching on infrared image of the EL2 center in semi-insulating(S.I.) GaAs has been studied using near infrared transmission techniques. Particular interest is devoted to as-grown and annealed samples of undoped S.I. GaAs. It is found that the quenching mechanism is different in each sample and also the quenching rate is dependent on the materials and the quenching temperature which is somewhat inconsistent with other existing publications.

적외선 영상기법을 이용해 반절연 GaAs 기판 내의 EL2 영상에 대한 Photoquenching의 영향을 성장원상태(as-grown)의 샘플과 열처리 샘플을 중심으로 분석하였다. 본 논문에서 Quenching 메커니즘은 샘플에 의존적이고 또한 Quenching율은 샘플의 성장조건과 Quenching 온도에 따라 다르다는 것을 영상적으로 정확히 증명하고 있는데 이 기존의 연구내용과는 다소 상충된 새로운 내용이다.

Keywords

References

  1. G. Vincent, D.Bois, A.Chantre, 'Photoelectric memory effect in GaAs', J. Appl. Phys. 53(5), pp. 3643-3649, May. 1982 https://doi.org/10.1063/1.331147
  2. P.W. Yu, 'Persistent photoluminescence quenching of 0.68-eV emission in undoped semiinsulation GaAs', Appl. Phys. Lett., 44(3), pp. 330-332, Feb. 1984 https://doi.org/10.1063/1.94743
  3. S. Nojima, 'Slow-relaxation phenomena in photoconductivity for semi-insulating GaAs', J. Appl. Phys. Lett, 58(9), pp. 747-748, Nov. 1985
  4. G.M. Martin, 'Optical assessment of the main electron trap in bulk semi-insulating GaAs', Appl. Phys. Lett., 42(7), pp. 747-748, Nov. 1981 https://doi.org/10.1063/1.92852
  5. M.R. Brozel, I. Grant, R.M. Ware, D. J. Stirland, 'Direct observation of the principal deep level(EL2) in undoped semi-insulating GaAs', Appl. Phys. Lett., 42(7), pp. 610-612, Apr. 1983 https://doi.org/10.1063/1.94019
  6. M.Castagne, J.P. Fillard, J.IBonnafe, 'EL2 related levels in GaAs-SI : transmission and dispersion in infrared imaging', Solid. Stat. Commun., 54(7), pp. 653-656, 1985 https://doi.org/10.1016/0038-1098(85)90099-7
  7. J.P. Fillard, 'Reconnaissance des defauts et traitement images pour les composes III-V', Annales des telecomm, 42(3-4), pp. 149-180, march. 1987
  8. S. J. Kang 'Contribution a l'etude du centre EL2 dans GaAs semi-isolant par photoextinction des images de transmission infra-rouge', Ph. D. Dissertation, U.S.T.L(Montpellier II, France), march, 1990
  9. S. J. Kang, 'New infrared imaging technique for evaluation of compound semiconductor crystals', Patent no.138855(23. Feb. 1998). Korea
  10. S. J. Kang, 'A Method for Evaluating the Temperature Coefficient of a Compound Semiconductor Energy Gap by Infrared Imaging Technique' Journal of the Institute of Electronics Engineers of Korea, vol. 38-SD, No.5 pp. 338-346, May, 2001
  11. J. C. Parker, R. Bray. 'Analysis of photoassisted thermal recovery of metastable EL2 defects in GaAs', Phys. Rev. B 37(11), pp. 6368-6376 Apr. 1988 https://doi.org/10.1103/PhysRevB.37.6368
  12. J.P Fillard, P.Gall, S.J.Kang, M.Castagne, J.Bonnafe, 'The role of EL2 in the infrared transmission images of defects in semiinsulating GaAs', Proceedings of the 5th conference on semi-insulating III-V materials pp. 543-548 Malmo, Sweden, 1-3 June 1988