대한기계학회논문집A (Transactions of the Korean Society of Mechanical Engineers A)

  • 제27권8호
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  • Pages.1309-1316
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  • 2003
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  • 1226-4873(pISSN)
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  • 2288-5226(eISSN)
대한기계학회 (The Korean Society of Mechanical Engineers)
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반도체 웨이퍼를 위한 새로운 다이싱 방법

A New Dicing Method for Semiconductor Wafer

  • 차영엽 (원광대학교 기계공학부) ;
  • 최범식 (원광대학교 대학원 기계공학부)
  • 발행 : 2003.08.01
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초록

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But products with inferior quality are produced under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer such as SiO2, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism and determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using scriber.

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참고문헌

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