한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제16권5호
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  • Pages.424-428
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  • 2003
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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플라즈마 식각을 이용한 초전도 자속 흐름 트랜지스터

Superconducting Flux flow Transistor using Plasma Etching

  • 발행 : 2003.05.01
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초록

The channel of a superconducting flux flow transistor has been fabricated with plasma etching method using a inductively coupled plasma etching. The ICP conditions then were ICP Power of 450 W, rf chuck power of 150 W, the pressure in chamber of 5 mTorr, and Ar : Cl$_2$=1:1. Especially, over the 5 mTorr, the superconducting thin films were not etched. The channel etched by plasma gas showed the critical temperature over 85 K. The critical current of the SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained trans-resistance value was smaller than 0.1 $\Omega$ at a bias current of 40 mA.

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참고문헌

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