대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

MOS구조에서의 원자층 증착 방법에 의한 $Ta_2O_{5}$ 박막의 전기적 특성에 관한 연구

A Study on the Electrical Properties of $Ta_2O_{5}$ Thin Films by Atomic Layer Deposition Method in MOS Structure

  • 이형석 (고려대학교 전기공학과) ;
  • 장진민 (고려대학교 전기공학과) ;
  • 임장권 (고려대학교 전기공학과) ;
  • 하만효 (고려대학교 전기공학과) ;
  • 김양수 (고려대학교 전기공학과) ;
  • 송정면 (고려대학교 전기공학과) ;
  • 문병무 (고려대학교 전기공학과)
  • 발행 : 2003.04.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

ln this work, we studied electrical characteristics and leakage current mechanism of $Ta_2O_{5}$ MOS(Metal-Oxide-Semiconductor) devices. $Ta_2O_{5}$ thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 $^{\circ}C$. The structures of the $Ta_2O_{5}$ thin films were examined by XRD(X-Ray Diffraction). From XRD, it is found that the structure of $Ta_2O_{5}$ is single phase and orthorhombic. From capacitance-voltage (C-V) anaysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of $Ta_2O_{5}$ thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.456${\times}10^{14}$ ($\omega{\cdot}cm$ at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K.

키워드

참고문헌

  1. H. Shinriki, Y.Nishioka, Y.Ohij, and K. Mukai, 'Oxidized $Ta_2O_5/Si_3N_4$ dielectric films on poly crystalline Si for DRAM's', IEEE Trans. Electron Devices, Vol.36, No.2, pp.328-332, 1989 https://doi.org/10.1109/16.19933
  2. 유병곤, 유종선, '신재료 고유전율/강유전체 박막의 기술 개발 동향', Journal of the Korean Institute of Electrical and Electronic Material Engineers. Vol.14, No.12. pp.22-29, 2001
  3. S.G. Byeon and Y. Tzeng, 'Charge trapping/generation and reliability for high-performance tantalum oxide capacitors', J. Appl. Phys. Vol.66, pp.4837-4842, 1989 https://doi.org/10.1063/1.343799
  4. G.S. Oehrlein, F.M. d'Heurle, and A. Reisman, 'Some properties of crystallized tantalum pentoxide thin films on silicon', J. Appl. phys. Vol.55, pp.3715-3723, 1984 https://doi.org/10.1063/1.332924
  5. D. Spassov and E. Atanassova, 'Thermal $Ta_2O_5$ Films as a gate insulator for thin capacitors', Int. J. Electronics, Vol.84, pp.453-466, 1998 https://doi.org/10.1080/002072198134562
  6. Shin-ichiro Kimura, Yasushiro Nishioka, Akira Shintani and Kiichiro Mukai, 'Leakage-Current Increase in Amorphous $Ta_2O_5$ Films Due to Pinhole Growh during Annealing Below $600^{\circ}C$', J. Electrochem. Soc. Vol.130, pp.2414-2418, 1983 https://doi.org/10.1149/1.2119599
  7. S.C Sun and T.F. Chen 'Reduction of Leakage current in Chemical-Vapor Deposited $Ta_2O_5$ Thin Films by Furnace $N_2O$ Annealing', IEEE Trans. Electron Devices., Vol.44,pp.1027- 1029, 1997 https://doi.org/10.1109/16.585562
  8. G.Q. Lo, D.L. Kwong, S. Lee, 'Metal-oxide-semiconductor characteristics of chemical vapor deposited $Ta_2O_5$ Films', Appl. Phys. Lett., Vol.60, pp.3286-3288, 1992 https://doi.org/10.1063/1.106721
  9. Y. Nishioka, N. Homma, H. Shinriki, K. Yamaguchi, A. Uchida, K. Higeta, and K. Ogiue, 'Ultra-Thin $Ta_2O_5$ Dielectric Film for high-speed bipolar memories', IEEE Trans. Electron Devices., Vol.34, pp.1957-1962, 1987
  10. Susumu Shibata, 'Dielectric constants of $Ta_2O_5$ thin films deposited by r.f sputtering', Thin Solid films, Vol.277, pp.1-4, 1996 https://doi.org/10.1016/0040-6090(95)08234-4
  11. Young-kag Yoo, 'The Electrical conduction and Optical Properties of $Ta_2O_5$ Thin Films by Sol-Gel Method', Journal of the Korean Institute of Electrical and Electronic Material Engineers, Vol.13, No.7, pp.575-582, 2000
  12. Kwan C. Kao and Wei Hwang, 'Electrical Transport in Solids', Pergamon Press, 198113
  13. Fu-Chien Chiu, Jenn-Jenn Wang, Joseph Ya-min Lee, and shich Chuan Wu, 'Leakage currents in amorphous $Ta_2O_5$ thin films', J. Appl. Phys. Vol.81, pp.6911-6915, 1997 https://doi.org/10.1063/1.365252
  14. S.M. Sze, Physics of Semiconductor Devices', John&Wiley & Sons, 198115
  15. 김창덕, 이승환, 김종관, 이동희, 성영권 '레이저 CVD법에 의한 고품질 $Ta_2O_5$ 박막의 퇴적과 그 특성', J. ENG. SCI. & TECH., Vol.33, pp.37-42, 1996
  16. S.M. Sze, 'Physics of Semiconductor Devices', John&Wiley & Sons, 1981
  17. 김창덕, 이승환, 김종관, 이동희, 성영권 '레이저 CVD법에 의한 고품질 $Ta_2O_5$ 박막의 퇴적과 그 특성', J. ENG. SCI. & TECH., Vol.33, pp.37-42, 1996