DOI QR코드

DOI QR Code

The Thickness Dependence of Edge Effect in Thin Insulating Films

  • Song Jeong-Myen (Department of Electrical Engineering, College of Engineering, Korea University) ;
  • Moon Byung-Moo (Department of Electrical Engineering, College of Engineering, Korea University) ;
  • Sung Yung-Kwon (Department of Electrical Engineering, College of Engineering, Korea University)
  • 발행 : 2003.08.01

초록

This paper deals with the edge effect in thin insulating films, focusing on their dependence on film thickness. The finding is that the electric field is lowered at the edge as the film thickness is reduced, which, in turn, is closely related to dielectric breakdown voltage. In order to analyze this phenomenon, a simple capacitor model is introduced with which dependence of dielectric breakdown voltage around the electrode edge on the film thickness is explained. Due to analytical difficulty to get the expression of electrical field strength at the edge, an equivalent circuit approach is used to find the voltage expression first and then the electric field expression using it. The relation gets to an agreement with the experimental findings shown in the paper. This outcome may be extended to solve similar problems in multi-layer insulating films.

키워드

참고문헌

  1. C. W. Ho, D. A. Chance, C. H. Bajorek, and R. E. Acosta, 'The thin film module as a high performance semiconductor package', IBM J. Res.Develop., Vol. 26, No. 3, p. 286, 1982 https://doi.org/10.1147/rd.263.0286
  2. C. M. Osburn and D. W. Ormond, 'Dielecthc breakdown in silicon dioxide films on silicon (1)', J.Electrochem.Soc., Vol. 119, No. 5, p. 591, 1972 https://doi.org/10.1149/1.2404268
  3. C. M. Osburn and N. J. Chou, 'Accelerated dielectric breakdown of silicon dioxide films', J. Electrochem. Soc., Vol. 120, No. 10, p. 1377, 1973 https://doi.org/10.1149/1.2403266
  4. Munir H. Nayfeh and Morton K. Brussel, 'Electricity and magnetism (in Korean)', 1990
  5. S. B. Park, 'Theory of alternating current circuit',Mun Un Dang, p. 86,1983
  6. Y. Inagaki, N. Tsuchida, and S. Nitta, 'Dielectric breakdown properties of evaporated SiO films', J. I.E. E. J, Vol. 89-9, No. 972, p. 206, 1969
  7. C. M. Osburn and D. W. Ormond, , J.Electrochem. Soc., Vol. 119, No. 5, p. 597, 1972