Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Characteristics of a PMOSFET Photodetector for Highly-Sensitive Active Pixel Sensor

고감도 능동픽셀센서를 위한 PMOSFET 광검출기의 특성

  • Seo, Sang-Ho (Department of Electronics, Kyungpook National University) ;
  • Park, Jae-Hyoun (Department of Electronics, Kyungpook National University) ;
  • Lee, June-Kyoo (Department of Sensor Engineering, Kyungpook National University) ;
  • Wang, In-Soo (Department of Electronics, Kyungpook National University) ;
  • Shin, Jang-Kyoo (Department of Electronics, Kyungpook National University) ;
  • Jo, Young-Chang (Korea Electronics Technology Institute) ;
  • Kim, Hoon (Korea Electronics Technology Institute)
  • Published : 2003.07.30
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Abstract

A PMOSFET photodetector for highly-sensitive active pixel sensor(APS) is presented. This sensor uses 5V power supply and has been designed and fabricated using I-poly and 2-metal $1.5{\mu}m$ CMOS technology. The feature of a PMOSFET photodetector is that the polysilicon gate of the PMOSFET was connected to n-well, in order to increase the photo sensitivity. The designed MOS photodetector has similar $I_{DS}-V_{DS}$ characteristics with a standard MOSFET. One dimensional image sensor with 16 pixels based on the PMOSFET photodetector has also been designed and fabricated. Unit pixel of the designed sensor consists of a PMOSFET photodetector and 4 NMOSFETs. Unit pixel area is $86{\mu}m{\times}90.5{\mu}m$ and its fill factor is about 12%.

고감도 능동픽셀센서(active pixel sensor, APS)를 위한 PMOSFET 광검출기를 설계 및 제작하였다. 이 센서는 5V의 전원 전압을 사용하며, 1-poly 2-metal $1.5{\mu}m$ CMOS공정으로 제작하였다. 사용된 광검출기는 빛에 대한 감도를 높이기 위해서 n-well과 게이트를 연결한 PHOSFET을 사용하였다. 제작된 광검출기는 일반 MOSFET이 $I_{DS}-V_{DS}$ 곡선과 유사한 특성을 가진다. PMOSFET 광검출기를 기본으로 하여 설계된 1차원 이미지 센서는 16개의 픽셀로 구성되어 있으며, 단위 픽셀은 하나의 PMOSFET 광검출기와 4개의 NMOSFET으로 구성되어있다. 단위 픽셀의 크기는 $86{\mu}m{\times}90.5{\mu}m$이며, 개구율은 약 12%이다.

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References

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