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http://dx.doi.org/10.5369/JSST.2003.12.4.149

Characteristics of a PMOSFET Photodetector for Highly-Sensitive Active Pixel Sensor  

Seo, Sang-Ho (Department of Electronics, Kyungpook National University)
Park, Jae-Hyoun (Department of Electronics, Kyungpook National University)
Lee, June-Kyoo (Department of Sensor Engineering, Kyungpook National University)
Wang, In-Soo (Department of Electronics, Kyungpook National University)
Shin, Jang-Kyoo (Department of Electronics, Kyungpook National University)
Jo, Young-Chang (Korea Electronics Technology Institute)
Kim, Hoon (Korea Electronics Technology Institute)
Publication Information
Journal of Sensor Science and Technology / v.12, no.4, 2003 , pp. 149-155 More about this Journal
Abstract
A PMOSFET photodetector for highly-sensitive active pixel sensor(APS) is presented. This sensor uses 5V power supply and has been designed and fabricated using I-poly and 2-metal $1.5{\mu}m$ CMOS technology. The feature of a PMOSFET photodetector is that the polysilicon gate of the PMOSFET was connected to n-well, in order to increase the photo sensitivity. The designed MOS photodetector has similar $I_{DS}-V_{DS}$ characteristics with a standard MOSFET. One dimensional image sensor with 16 pixels based on the PMOSFET photodetector has also been designed and fabricated. Unit pixel of the designed sensor consists of a PMOSFET photodetector and 4 NMOSFETs. Unit pixel area is $86{\mu}m{\times}90.5{\mu}m$ and its fill factor is about 12%.
Keywords
Photodetector; Highly-sensitive active pixel sensor(APS);
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