대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

ITO 에미터 투명전극을 갖는 InP/InGaAs HPT 제작

Fabrication of InP/InGaAs HPT's with ITO Emitter Contacts

  • 강민수 (LG電子 技術院 유기EL 事業擔當 모델開發그룹) ;
  • 한교용 (嶺南大學校 電子情報工學部)
  • 발행 : 2002.11.01
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초록

In this paper, Heterojunction phototransistors(HPT's) with an optically transparent ITO emitter contacts were fabricated. The ITO ohmic contacts were realized by employing thin imdium layer between the ITO and $n^+$-InP layers. The ITO contact was annealed at $250^{\circ}C$. The specific contact resistance of about $6.6{\times}10^{-4}{\Omega}cm^2$ was measured by use of the transmission line model (TLM). Heterojunction bipolar transistors (HBTs) having the same device layout were fabricated to compare with HPTs. The DC characteristics of the InP/InGaAs HPT showed the similar electrical characteristics of the HBT. Emitter contact resistance($R_E$) of about $6.4{\Omega}$ was extracted, which was very similar to that of the HBT. The optical characteristics of HPT's were generated by illuminating the device with light from $1.3{\mu}m$ light. It showed that HPT's can be controlled optically.

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참고문헌

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