JSTS:Journal of Semiconductor Technology and Science

  • 제2권1호
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  • Pages.7-18
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  • 2002
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

Single-ended Differential RF Circuit Topologies Utilizing Complementary MOS Devices

  • Kim, Bonkee (Department of Electrical Engineering and Computer Science, Korea Advanced Instituter of Science and Technology) ;
  • Ilku Nam (Department of Electrical Engineering and Computer Science, Korea Advanced Instituter of Science and Technology) ;
  • Lee, Kwyro (Department of Electrical Engineering and Computer Science, Korea Advanced Instituter of Science and Technology)
  • 발행 : 2002.03.01
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초록

Single-ended differential RF circuit topologies fully utilizing complementary characteristics of both NMOS and PMOS are proposed, which have inherent advantage of both single-ended and differential circuits. Using this concept, we propose a CCPP (Complementary CMOS parallel push-pull) amplifier which has single-ended input/output with differential amplifying characteristics, leading to more than 30 dB improvement on $IIP_2$. In addition, complementary resistive mixer is also proposed, which provides not only differential IF outputs from single-ended RF input, but much better linearity as well as isolation characteristics. Experimental results using $0.35{\;}\mu\textrm{m}$ CMOS process show that, compared with conventional NMOS resistive mixer, the proposed mixer shows 15 dB better LO-to-IF isolation, 4.6 dB better $IIP_2$, and 4.5 dB better $IIP_3$performances.

키워드

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