Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Silicon Oxidation in Inductively-Coupled N2O Plasma and its Effect on Polycrystalline-Silicon Thin Film Transistors

유도결합 N2O 플라즈마를 이용한 실리콘 산화막의 저온성장과 다결정 실리콘 박막 트랜지스터에의 영향

  • Won, Man-Ho (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Kim, Sung-Chul (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Ahn, Jin-Hyung (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Kim, Bo-Hyun (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Ahn, Byung-Tae (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
  • 원만호 (한국과학기술원 재료공학과) ;
  • 김성철 (한국과학기술원 재료공학과) ;
  • 안진형 (한국과학기술원 재료공학과) ;
  • 김보현 (한국과학기술원 재료공학과) ;
  • 안병태 (한국과학기술원 재료공학과)
  • Published : 2002.09.01
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Abstract

Inductively-coupled $N_2$O plasma was utilized to grow silicon dioxide at low temperature and applied to fabricate polycrystalline-silicon thin film transistors. At $400^{\circ}C$, the thickness of oxide was limited to 5nm and the oxide contained Si≡N and ≡Si-N-Si≡ bonds. The nitrogen incorporation improved breakdown field to 10MV/cm and reduced the interface charge density to $1.52$\times$10^{11}$ $cm^2$ with negative charge. The $N_2$O plasma gate oxide enhanced the field effect mobility of polycrystalline thin film transistor, compared to $O_2$ plasma gate oxide, due to the reduced interface charge at the $Si/SiO_2$ interface and also due to the reduced trap density at Si grain boundaries by nitrogen passivation.

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References

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