Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Wet Cleaning Process for Cobalt Salicide

코발트살리사이드를 위한 습식세정 공정

  • 정성희 (서울시립대학교 신소재공학과) ;
  • 송오성 (서울시립대학교 신소재공학과)
  • Published : 2002.12.01
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Abstract

We investigated the appropriate wet cleaning process for Co-Ti-Si compounds formed on top of cobalt disilicide made from Co/Ti deposition and two rapid thermal annealing (RTA). We employed three wet cleaning processes, WP1 ($H_2$SO$_4$ etchant), WP2 ($NH_4$OH etchant), and WP3 which execute sequentially WP1 and WP2 after the first RTA. All samples were cleaned with BOE etchant after the second RTA. We characterized the sheet resistance with process steps by a four-point probe, the microstructure evolution by a cross detail sectional transmission electron microscope, a Auger depth profiler, and a X-ray diffractometer (XRD). We confirmed WP3 wet cleaning process were the most suitable to remove CoTiSi layer selectively.

Keywords

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