Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The DC Characteristics of InP/InGaAs HPT′s with ITO Emitter Contacts

ITO 에미터 전극을 갖는 InP/InGaAs HPT의 DC 특성

  • Published : 2002.10.01
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Abstract

In this paper, we fabricated heterojunction phototransistors(HPT's) with optically transparent ITO emitter contacts. Heterojunction transistors(HBT's) having the same device layout were fabricated to compare with HPT's. The model parameters of the devices were extracted and compared. Emitter contact resistance(RE) of the HPT was about 6.4$\Omega$, which was very similar to that of HBT and the other DC model parameters of the Inp/InGaAs HPT showed the similarities to those of the HIBT.

본 논문에서는 광학적으로 투명한 ITO를 에미터 전극을 갖는 InP/InGaAs HPT를 제작하였고 제작된 HPT의 전기적 특성을 분석하기 위해 확장된 Ebers-Moll 방정식을 이용하여 DC 모델파라미터들을 추출하였다. 또한 초고속 전자소자로서 사용되어지는 InP/lnGaAs HBT를 제작하여 그 전기적 특성을 HPT와 비교하였다. 제작된 HPT의 에미터접촉 저항(RE)값이 6.4Ω으로 HBT와 거의 동일함은 물론 HPT의 모든 UC 모델 파라미터들이 HBT 와 유사함을 알 수 있었다.

Keywords

References

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