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The DC Characteristics of InP/InGaAs HPT′s with ITO Emitter Contacts  

강민수 (LG 전자)
한교룡 (영남대학교 전자정보공학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.39, no.10, 2002 , pp. 16-24 More about this Journal
Abstract
In this paper, we fabricated heterojunction phototransistors(HPT's) with optically transparent ITO emitter contacts. Heterojunction transistors(HBT's) having the same device layout were fabricated to compare with HPT's. The model parameters of the devices were extracted and compared. Emitter contact resistance(RE) of the HPT was about 6.4$\Omega$, which was very similar to that of HBT and the other DC model parameters of the Inp/InGaAs HPT showed the similarities to those of the HIBT.
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Times Cited By KSCI : 3  (Citation Analysis)
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