JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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High-Speed Signaling in SDARM Bus Interface Channels : Review

  • Park, Hong-June (Dept. Electrical and Computer Engineering, Pohang University of Science and Technology (POSTECH)) ;
  • Sohn, Young-Soo (Dept. Electrical and Computer Engineering, Pohang University of Science and Technology (POSTECH)) ;
  • Park, Jin-Seok (Dept. Electrical and Computer Engineering, Pohang University of Science and Technology (POSTECH)) ;
  • Bae, Seung-Jun (Dept. Electrical and Computer Engineering, Pohang University of Science and Technology (POSTECH)) ;
  • Park, Seok-Woo (Dept. Electrical and Computer Engineering, Pohang University of Science and Technology (POSTECH))
  • Published : 2001.03.01
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Abstract

Three kinds of high-speed signaling methods for synchronous DRAM (SDRAM) bus interface channels (PC-133, Direct-Rambus, and SSTL-2) were analyzed in terms of the timing budget and the physical transmission characteristics. To analyze the SDRAM bus interface channels, loss mechanisms and the effective characteristic impedance method were reviewed and the ABCD matrix method was proposed as an analytic and yet accurate method. SPICE simulations were done to get the AC responses and the eye patterns of the three SDRAM bus interface channels for performance comparisons. Recent progress and future trend for SDRAM bus interface standards were reviewed.

Keywords

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