Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Analytical Model of Breakdown Voltages for 6H-SiC $p^{+}n$ Junction

6H-SiC $p^{+}n$ 접합의 항복 전압을 위한 해석적 모형

  • 정용성 (서라벌대학 전기전자전산학부)
  • Published : 2001.06.01
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Abstract

In this paper, effective ionization coefficient for 6H-SiC is determined. Analytical formulas for the parallel plane breakdown voltage of the 6H-SiC p＋n junction are derived by employing the ionization coefficients. The analytical breakdown voltages show good agreement with the numerical results of Dmitriev＇s［3］and the experimental results of Cree Research［9］over the doping range from 10$^{15}$ cm$^{-3}$ to 10$^{18}$ cm$^{-3}$.

본 논문에서는 6H-SiC의 유효 이온화 계수를 추출하였고, 이 이온화 계수를 이용하여 6H-SiC p＋n 접합의 해석적 항복 전압 식을 유도하였다. 해석적 항복 전압 결과는 10/sup 15/ cm/sup -3/ ∼ 10/sup 18/ cm/sup -3/의 농도 범위에서 Dmitriev의 수치적 결과［3］ 및 Cree Research의 실험 결과［9］와 비교하여 잘 일치하였다.

Keywords

References

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