원통형 결함을 포함한 Ramp-Edge Junction의 수송특성

Transport Properties of Ramp-Edge Junction with Columnar Defects

  • Lee, C. W. (Institute of Basic Sciences, Yeungnam University, Kyungsan) ;
  • Kim, D. H. (Institute of Basic Sciences, Yeungnam University, Kyungsan) ;
  • Lee, T. W. (Institute of Basic Sciences, Yeungnam University, Kyungsan) ;
  • Sung, Gun-Yong (Electronics and Telecommunications Research In stitute, Taejon) ;
  • Kim, Sang-Hyeob (Electronics and Telecommunications Research In stitute, Taejon)
  • 발행 : 2001.01.01

초록

We measured the transport properties of$ YBa_2$$Cu_3$$O_{x}$ ramp-edge junction fabricated with interface-engineered barrier. The current-voltage characteristics show a typical resistively-shunted junction like behavior Voltage noise measurement revealed that the main source of the 1/f noise is the critical current and resistance fluctuations. The analysis of the noise data showed that the critical current fluctuations increase with temperature, whereas the resistance fluctuations are almost constant, and both fluctuations are almost correlated. The smaller magnitude of the critical current and resistance fluctuations seems to result from the columnar-deflects.s.

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