Transport Properties of Ramp-Edge Junction with Columnar Defects

원통형 결함을 포함한 Ramp-Edge Junction의 수송특성

  • Lee, C. W. (Institute of Basic Sciences, Yeungnam University, Kyungsan) ;
  • Kim, D. H. (Institute of Basic Sciences, Yeungnam University, Kyungsan) ;
  • Lee, T. W. (Institute of Basic Sciences, Yeungnam University, Kyungsan) ;
  • Sung, Gun-Yong (Electronics and Telecommunications Research In stitute, Taejon) ;
  • Kim, Sang-Hyeob (Electronics and Telecommunications Research In stitute, Taejon)
  • Published : 2001.01.01

Abstract

We measured the transport properties of$ YBa_2$$Cu_3$$O_{x}$ ramp-edge junction fabricated with interface-engineered barrier. The current-voltage characteristics show a typical resistively-shunted junction like behavior Voltage noise measurement revealed that the main source of the 1/f noise is the critical current and resistance fluctuations. The analysis of the noise data showed that the critical current fluctuations increase with temperature, whereas the resistance fluctuations are almost constant, and both fluctuations are almost correlated. The smaller magnitude of the critical current and resistance fluctuations seems to result from the columnar-deflects.s.

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