Transactions on Electrical and Electronic Materials
- Volume 2 Issue 2
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- Pages.26-31
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- 2001
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- 1229-7607(pISSN)
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- 2092-7592(eISSN)
Electrochemical Etch-Stop Suitable for MEMS Applications
- Chung, Gwiy-Sang (School of Information and System Engineering, Dongseo University) ;
- Kim, Sun-Chunl (School of Electronics and Information Engineering, Kyungnam Information College) ;
- Kim, Tae-Song (Microsystem Research Center, Korea Institute of Science and Technology(KIST))
- Published : 2001.06.01
Abstract
This paper presents the electrochemical etch-stop characteristics of single-crystal Si(001) wafers in tetramethyl ammonium hydroxide(TMAH):isopropyl alcohol(IPA):pyrazine solutions. The addition of pyrazine to TMAH:IPA solutions increased the etch rate of (100) Si, thus the etching time required by the etch-stop process shortened. The current-voltage(I-V) characteristics of n- and p-type Si in TMAH:IPA:pyrazine solutions were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type Si, respectively, were obtained and applied potential was selected between n- and p-type Si PPs. The electrochemical etch-stop method was used to fabricate 801 microdiaphragms of 20