The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Improvement of Geometrical Structure of Cr-Gate Electrode in Mo-tip Field Emitter Array

몰리브덴 팁 전계 방출 소자에 있어서 크롬 게이트 전극 구조의 개선

  • 주병권 (KIST 디스플레이 및 나노 소자연구소) ;
  • 김훈 (KIST 디스플레이 및 나노 소자연구소) ;
  • 서상원 ;
  • 이윤희 (KIST 디스플레이 및 나노 소자연구소)
  • Published : 2001.10.01
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Abstract

The sputtering condition of Cr thin film was established in order to get Cr gate electrode having a vertical wall structure for Mo-tip FEA. In case of Mo-tip FEA which had a vertically-etched Cr gate electrode, the field enhancement factor, was relatively increased and so the field emission performance in terms of turn-on voltage, emission current and trans-conductance could be improved when compared with the devices having a tapered gate wall.

Keywords

References

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