대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

몰리브덴 팁 전계 방출 소자에 있어서 크롬 게이트 전극 구조의 개선

Improvement of Geometrical Structure of Cr-Gate Electrode in Mo-tip Field Emitter Array

  • 주병권 (KIST 디스플레이 및 나노 소자연구소) ;
  • 김훈 (KIST 디스플레이 및 나노 소자연구소) ;
  • 서상원 ;
  • 이윤희 (KIST 디스플레이 및 나노 소자연구소)
  • 발행 : 2001.10.01
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초록

The sputtering condition of Cr thin film was established in order to get Cr gate electrode having a vertical wall structure for Mo-tip FEA. In case of Mo-tip FEA which had a vertically-etched Cr gate electrode, the field enhancement factor, was relatively increased and so the field emission performance in terms of turn-on voltage, emission current and trans-conductance could be improved when compared with the devices having a tapered gate wall.

키워드

참고문헌

  1. C.Gautier, H.Moussaoui, F.Elstner and J.Machet, Comparative study of mechanical and structural properties of CrN films deposited by d.c magnetron sputtering and vacuum arc evaporation, Surf. Coat.Technol., 86-87, 254 (1996) https://doi.org/10.1016/S0257-8972(96)02951-9
  2. J.A.Thornton, influnce of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings, J.Vac.Sci.Technol., 11, 4, 666 (1974) https://doi.org/10.1116/1.1312732
  3. H.T.G.Hentzell, C.R.M.Grovenor and D.A.Smith, Grain structure variation with temperature for evaporated metal films, J.Vac.Sci.Technol., A, 2, 2, 218(1984) https://doi.org/10.1116/1.572727
  4. 주병권, 김훈, 서상원, 박종원, 몰리브덴 팁 전계 방출 소자를 이용한 CRT의 냉음극 전자총의 제조 및 특성평가, 전기학회 논문지 제50c권 8호, 409-413 (2001)