The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Fabrication and Characterization of Floating-Gate MOSFET with Multi-Gate and Channel Structures for CMOS Image Sensor Applications

다중 Gate 및 Channel 구조를 갖는 CMOS 영상 센서용 Floating-Gate MOSFET 소자의 제작 및 특성 평가

  • 주병권 (KIST 정보재료소자연구부(공박)) ;
  • 신경식 (. 고려대 대학원 전자공학과 박사과정, 한국과학기술연권 정보재료소자센터 학생연구원) ;
  • 이영석 (청운 대학교 전자공학과(공박)) ;
  • 백경갑 (대전대학교 전자공학과(공박)) ;
  • 이윤희 (KIST 정보재료소자연구센터(이박)) ;
  • 박정호 (고려대 전자공학과(공박))
  • Published : 2001.01.01
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Abstract

The floating-gate MOSFETs were fabricated by employing 1.5 m n-well CMOS process and their optical-electrical properties were characterized for the application to CMOS image sensor system. Based on the simulation of energy band diagram and operating mechanism of parasitic BJT were proposed as solutions for the increase of photo-current value. In order to realize them, MOSFETs having multi-gate and channel structures were fabricated and 60% increase in photo-current was achieved through enlargement of depletion layer and parallel connection of parasitic BJTs by channel division.

Keywords

References

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