The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on Electrical Properties of PZT Thin Films Deposited on the Glass Substrates

유리기판 위에 증착한 PZT 박막의 전기적 특성에 관한 연구

  • 정규원 (성균관대 전기전자컴퓨터학과) ;
  • 주필연 (성균관대 전기전자컴퓨터학과) ;
  • 박영 (성균관대 전기전자컴퓨터학과) ;
  • 이준신 (성균관대 전기전자컴퓨터학과) ;
  • 송준태 (성균관대 전기전자컴퓨터학과)
  • Published : 2001.01.01
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Abstract

PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.

Keywords

References

  1. Carabao. J, Sudhama. C, Chikarmane. V, Lee. J, Tasch. A, Shepherd. W and Abt. N, 'Electrical and Reliability Properties of PZT Thin-Films for ULSI DRAM Applications,' IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control 38(6), pp. 690-703, 1991 https://doi.org/10.1109/58.108871
  2. L. E. Sanchez et al, 'Process Technology Developments For GaAs Ferroelectrics Nonvolatile Memory,' Integrated Ferroelectrics, vol. 2, pp.231-241, 1992 https://doi.org/10.1080/10584589208215746
  3. J. F. Scott and C. A. Paz de Arauzo, 'Ferroelectric Memories,' Science, 246, pp.1400. 1989 https://doi.org/10.1126/science.246.4936.1400
  4. B. Jaffe et al., Piezoelectric Ceramics, Academic Press, pp.2. 1971
  5. S. B. Krupanichi, 'Recent advances in the deposition of ferroelectric thin films,' Proceedings of the 3rd International Symposium on Integrated Ferroelectrics, pp. 10-29, 1991
  6. 백동수, 김현권, 최형욱, 김준한, 박창엽, 신현용, '급속 열처리에 의한 PZT 강유전 박막의 제작', 대한전기학회 1993년도 하계학술대회 논문집(B),1 pp.1106-1109, 1993
  7. J. F. Scott, MRS Conference (MRS Proc,243), 1991
  8. Viswanathan Kumar, Yukata OHYA, Yasutaka Takahashi, 'Sol-gel processing of ferroelectric $PbTiO_3$and PZT thin films,' Jpn. J. Appl. Phys., Vol. 37, pp. 4477-4481, 1998 https://doi.org/10.1143/JJAP.37.4477
  9. Lee EG, Wouters DJ, Willems G, Maes HE, 'Voltage shift and deformation in the hysteresis loop of PZT thin film by defects,' Applied Physics Letters, Vol. 69 No. 9, pp. 1223, 1996 https://doi.org/10.1063/1.117418
  10. R. Ramesh, Thin film ferroelectric materials and devices, pp. 221, 1997
  11. W. L. Warren et al., 'Mechanism for the Suppression of The Switchable Polarization in PZT and $BaTiO_3$,' Ferroelectric Thin Films IV, MRS, Vol. 361, pp.51, 1995
  12. G. Arlt, 'Aging and Fatigue in bulk ferroelectric ceramics,' 4th ISIF Proc, pp. 632, 1992
  13. J. F. Scott et al., J. Appl. Phys., Vol.68(11), pp.5783, 1990 https://doi.org/10.1063/1.346948
  14. 박 영, '메모리 소자응용을 위한 강유전체 PZT박막 캐페시터에 관한 연구', 성균관대학교 대학원 전기전자 컴퓨터공학과 석사학위논문, pp. 46-48, 1999
  15. Seung-Hyun Kim, J. G. Hong, S. K. Streiffer, Angus I. Kingon, 'The effect of RuO₂/Pt hybrid bottom electrode structure on the leakage and fatigue properties of chemical solution derived $Pb(ZrxTi_{1-x})O_3$thin films,' Journal of Mat. Res. Soc, Vol.14, No.3, pp.1018-1025, 1999