Near-field photocurrent measurements on GaAs/AIGaAs multiple quantum wells

  • Shin, Jung-Gyu (Nano system Laboratory, Samsung Advanced Institute of Technology) ;
  • Lee, Joo-In (Optoelectronics group, Korea Research Institute of Standards and Science) ;
  • Lee, Jae-Young m (Thin film group, Korea Research Institute of Standards and science) ;
  • Sungkyu Yu (Optoelectronics group, Korea Research Institute of Standards and Science)
  • Published : 2000.06.01

Abstract

Near-field photocurrent experiments were performed for GaAs/AIGaAs MQWs at room temperature. Heavy hole and light hole related peaks are clearly resolved even under extremely low power of near-field excitation. By scanning laterally 2 $\mu\textrm{m}$${\times}$2 $\mu\textrm{m}$ area on the surface, minority carrier diffusion process in the well region was qualitatively studied.

Keywords