Journal of Korean Vacuum Science & Technology
- Volume 4 Issue 2
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- Pages.41-43
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- 2000
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- 1226-6167(pISSN)
Exciton Dynamics of GaAs/AIGaAs Quantum Wells
- Lee, Joo-In (Optoelectronics group, Korea Research Institute of Standards and Science) ;
- Lee, Jae-Young m (Optoelectronics group, Korea Research Institute of Standards and Science) ;
- Sungkyu Yu (Thin film group, Korea Research Institute of Standards and science) ;
- Lee, Chang-Myung (Optoelectronics group, Korea Research Institute of Standards and Science)
- Published : 2000.06.01
Abstract
We present a study of exciton relaxation in GaAs/AIGaAs quantum well structures by using time-resolved photoluminescence techniques.03 observed that light-hole exciton has a longer decay time than heavy-hole exciton, which results from the difference of the exciton population factor. We considered the thermal population time to explain the observed exciton dynamics.
Keywords