대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

SOI 트렌치-모스 바이폴라-모드 전계효과 트랜지스터 구조의 설계 및 수치해석

Design and Numerical Analyses of SOI Trench-MOS Bipolar-Mode Field Effect Transistor

  • 발행 : 2000.05.01
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초록

A new Lateral Trench-MOS Bipolar-Mode Field-Effect Transistor(LTMBMFET) is proposed and verified by MEDICI simulation. By using a trench MOS structure, the proposed device can enhance the current gain without sacrificing other device characteristics such as the breakdown voltage. The channel region of the proposed device is formed between the trench MOS structure. So the effect of the substrate voltage is negligible when compared with the conventional device which has a channel region between the gate junction and the buried oxide layer.

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참고문헌

  1. S. Bellone, A. Caruso, P. Spirito, G. Vitale, G. Busatto, G. Cocorullo, G. Ferla and S. Musumeci, 'High-voltage Bipolar Mode JFET with Normally-off Characteristics,' IEEE Electron Dev. Lett., vol. EDL-6, pp. 522-524, 1985
  2. A. Caruso, P. Spirito, G. Vitale, G. Busatto, G. Ferla and S. Musumeci, 'Performance Analysis of a Bipolar Mode FET (BMFET) with Normally-off Characteristics,' IEEE Trans. on Power Electron., vol. 3, pp. 157-163, 1988 https://doi.org/10.1109/63.4345
  3. S. D. Kim, D. S. Byeon, K. Yang, O. K. Kwon, M. K. Han and Y. I. Choi, 'A Lateral SOI BMFET with High Current Gain,' Proc. of ISPSD'95, pp. 288-292, 1995
  4. S. D. Kim, J. H. Kim, C. M. Yun, M. K. Han and Y. I. Choi, 'An SOI Lateral BMFET for Power IC Applications,' Proc. of EPE, pp. 240-244, 1995
  5. S. D. Kim, D. Y. Kim, M. S. Lim, M. K. Han and Y. I. Choi, 'Effects of Drift Region Doping on Current Characteristics in SOI BMFET,' Physica Scripta, vol. T69, pp. 181-184, 1997 https://doi.org/10.1088/0031-8949/1997/T69/035
  6. MEDICI two dimensional device simulation program user's manual, Technology Modeling Associates INC., 1994