Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 8 Issue 4B
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- Pages.536-540
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- 1999
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- 1225-8822(pISSN)
Fabrication and its characteristics of $WN_x$ self-align gate GaAs LDD MESFET
$WN_x$ Self-Align Gate GaAs LDD MESFET의 제작 및 특성
Abstract
We have developed a refractory WNx self-aligned gate GaAs metal-semiconductor field-effect transistor(MESFET) using
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