참고문헌
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- Proceedings of the IEEE v.79 no.5 Thin Film Deposition and Microelectronic and Optoelectronic Device Fabrication and Characterization in Monocrystalline Alpha and Beta Silicon Carbide R.F. Davis;G. Kelner;M. Shur;J.W. Palmour;J.A. Edmond
- U.S. Pat. No. 5,201,995 Alternating Cyclic Pressure Modulation Process For Selective Area Deposition A. Reisman;D. Temple
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J. Crystal Growth
v.77
OMVPE Growth of
$Ga_xIn_{1-x}P/GaAs(Al_yGa{1-y}As)$ Heterostructures for Optical and Electronic Device Applications C.F. Schaus;W.J. Schaff;J.R. Shealy - J. Electrochem. Soc. v.139 no.12 Low-Temperature Growth of 3C-SiC on Si Substrate by Chemical Vapor Deposition Using Hexamethyldisilane as a Source Material K. Takahashi;S. Nishino;J. Saraie
- J. Appl. Phys. v.70 no.3 In Situ Doped Polycrystalline Silicon Selective Growth using the SiH₂Cl₂/H₂/HCl/PH₃ Gas System Y. Ohshita;H. Kitajima
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Appl. Phys. Lett.
v.61
no.6
Kinetics of Selective Epitaxial Deposition of
$Si_{1-x}Ge_x$ T.I. Kamins;D.W. Vook;P.K. Yu;J.E. Turner - Thin Film Deposition-Principles and Practice Chemical Vapor Deposition Donald. L. Smith
- Thin Film Deposition-Principles and Practice Deposition Donald. L. Smith