The Forward Characteristics of A New Lateral Thyristor with Current Saturation

전류포화특성을 갖는 새로운 이중게이트 수평형 사이리스터의 순방향 특성

  • Published : 1999.12.01

Abstract

A newly proposed lateral dual-gate thyristor was fabricated and measured, which has excellent current saturation characteristics of $1200A/cm^2$ even at an anode-gate voltage of 29V, through the elimination of the structurally existing parasitic thyristor. And through the comparison with the LIGBT, the excellent current saturation characteristics of a newly proposed device was verified.

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References

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